Universitat Autònoma de Barcelona

Universitat Autònoma de Barcelona

Universitat Autònoma Barcelona - SiNANO Member

Contact persons:

 Montserrat Nafria (montse.nafria@uab.es)

Full Professor
Dept. Enginyeria Electrònica

Escola d’Enginyeria.
Carrer de les Sitges, s/n.

Campus de la UAB · 08193 Bellaterra
Barcelona · Spain
T +34 93 581 18 29

Jordi Sune (jordi.sune@uab.es)

UAB presentation

The group of Micro and Nanoelectronic Devices belongs to the Department of Electronic Engineering of the Universitat Autònoma Barcelona (Spain) and has a large and distinguished experience in the field of nanoelectronic devices, both  ultimate CMOS devices (More Moore domain) and also emerging devices that take advantage of materials properties at the nanoscale (Beyond CMOS domain). Its activities cover the device concept, modeling, simulation, characterization and reliability. The group has built the required experimental facilities to carry out this research.

Read more
Beyond CMOSMore MooreMore than MooreSystem Integration

Main expertises

  • Resistive switching devices (memristors): characterization and modeling.
  • SPICE modeling of memristive nanowire networks
  • Computation of thermal properties of novel materials and nanostructures with DFT and Molecular Dynamics.
  • Electrical characterization of 2D nanodevices.
  • Development of specialized characterization set-ups.
  • Structural, electronic and thermal properties of vdW materials from first principles.

Research interests

  • Memristors compact modeling.
  • Neuromorphic computing architectures.
  • Stochastic Resonance in memristors
  • Reservoir computing
  • Thermal management
  • Emergence of phonon & electron hydrodynamic effects at the nanoscale
  • Nanoscale (with CAFM) and device level electrical characterization of 2D nanodevices.
  • Resistive switching phenomenon in 2D materials.
  • Graphene-based devices for security applications.

Main expertises

  • Reliability of CMOS devices and integrated circuits.
  • Electrical characterization and Modeling of 2D semiconductor based FETs for digital and RF applications.
  • Development of specialized characterization set-ups and smart analysis techniques
  • Modelling of quantum transport and simulation of nanometer scale devices using a multi-scale approach from ab-initio methods (SIESTA, BITLLES) to compact modelling.
  • Modelling and simulation of ultra-small SOI-based MOSFETs in the scaling limit.
  • Resistive switching devices (ReRAM): characterization and modeling.

Research interests

  • Characterization of variability and aging mechanisms (RTN, BTI, HCI, OFF-state, TDDB) in advanced nanoelectronic devices, including process-related variability.
  • Device aging impact on ICs performance.
  • Exploitation of device variability for security applications
  • ReRAM compact modeling.
  • ReRAM with 2D materials.
  • Stochastic Resonance in ReRAM

Main expertises

  • Modelling and simulation of graphene and post-graphene 2D materials devices targeting RF and sensing applications
  • RF characterization and modelling of memristors
  • Electrical characterization and modeling of inkjet-printed devices, Organic TFTs.

Research interests

  • Graphene based devices targeting RF applications
  • Exploitation of memristors in RF applications
  • Emerging devices for security applications and wearable electronics

Main expertises

  • Device compact modeling for Reliability-Aware Design of ICs.

Research interests

  • Physics-based compact modelling of the CMOS aging mechanisms, for their inclusion in circuit reliability simulators.
Meet the team

Minatec –  CROMA
3 Parvis Louis Néel, CS 50257
38016 Grenoble Cedex 1,  France

+33 456 52 95 09
 sinano@minatec.grenoble-inp.fr