Minatec – CROMA
3 Parvis Louis Néel, CS 50257
38016 Grenoble Cedex 1, France
+33 456 52 95 09
contact@sinano.eu
Main expertises
Novel computing architectures (Neuromorphic, Quantum...)
- URV: Physics and modeling of neuromorphic devices, in particular memristors.
- UGR: Neuromorphic and in-memory device concepts; 2D/CMOS hybrid architectures; device/circuit co-design.
Phonon engineering
- UGR: Nanoscale thermal modelling for laser processing and 2D/Si material stacks.
Small slope switches-TFET/Fe Transistors/Dirac-Source FET/NEMS/etc.
- URV: Physics and modeling of TFETs
- UGR: TFET and DD-RFET device physics and TCAD; low-power steep-slope device concepts.
Alternative materials-2D layers
- URV: Physics, compact modeling and parameter extraction of TMD FETs.
- UGR: Graphene and TMD devices (MoS2/WS2); CVD/PE-ALD growth, transfer, laser recrystallization, patterning and electrical/noise characterization.
1D Devices/NW/CNT
- URV: Compact modeling of Si NW MOSFETs
Very low temperature electronics
- URV: Understanding and modeling of physical effects in FET devices at very low tempoeratures.
Amorphous Oxide Semiconductor FETs
- URV: Physics, compact modeling and parameter extraction of AOS TFTs, including noise.
Others
- UGR: Nanosecond laser processing/recrystallization; nanoscale electrical-noise and RTN characterization.
Research interests
Novel computing architectures (Neuromorphic, Quantum...)
- URV: Compact modeling of neuromorphic devices, in particular memristors.
- URV: Modeling of quantum and cryogenic effects I devices for quantum computing.
- UGR: BEOL 2D neuromorphic devices and eNVM; sensor-to-edge/neuromorphic integration; quantum-compatible 2D/Si interfaces.
Phonon engineering
- UGR: Heat transport and thermal-boundary effects in ultrathin films; nanosecond laser-material interaction.
Small slope switches-TFET/Fe Transistors/Dirac-Source FET/NEMS/etc.
- URV: Compact modeling of TFETs and Fe transistors.
- UGR: 2D/Si heterojunction switches; compact models, variability and reliability of steep-slope devices.
Alternative materials-2D layers
- URV: Compact modeling of 2D FET transistors, including noise and transient effects.
- UGR: Transfer-free <400 °C BEOL growth; contacts/interfaces/passivation; wafer-scale 2D-on-CMOS integration, variability and reliability.
1D Devices/NW/CNT
- URV: Physics and modeling of 1D devices including quantum confinement.
Very low temperature electronics
- URV: Complete compact modeling of FET devices at cryogenic temperatures.
- UGR: Cryogenic characterization of 2D/CMOS interfaces and electronics for quantum-control and sensing applications.
Amorphous Oxide Semiconductor FETs
- URV: Physics, compact modeling and parameter extraction of AOS TFTs, including noise.
Others
- UGR: Laser-directed crystallization/nanostructuring of semiconductor films; coupled process-structure-property modelling.
Main expertises
Logic Nanodevices & circuits/FDSOI, Nanosheet, Stacked channels, etc.
- URV: Compact modeling and parameter extraction of FD and UTB SOI MOSFETs, as well as of Multi-Gate MOSFETs.
- UGR: Si-CMOS/FDSOI nanoelectronics; TCAD and DFT-informed modelling; device characterization and test structures.
Memories/Charge-based, Resistive/Capacitive
- URV: Physics and modeling of memristors.
- UGR: 1T-DRAM; eNVM/neuromorphic devices; electrical characterization and modelling.
Very low power devices
- URV: Physics of FET devices at very low power operation.
- UGR: Low-power device engineering; leakage/electrostatics optimization; energy-efficient sensing and readout.
High temperature electronics
- URV: Physics of high temperature operation in FET devices.
- UGR: GaN HEMT device modelling and electrical characterization, including reliability-oriented analysis.
Others
- UGR: Process/device TCAD; DFT-linked interface models; low-frequency noise, RTN and phase-noise test structures.
Research interests
Logic Nanodevices & circuits/FDSOI, Nanosheet, Stacked channels, etc.
- URV: Physics and modeling of nanosheets MOSFETs.
- UGR: Monolithic BEOL 2D/FDSOI co-integration; low-temperature process modules; variability, reliability and compact modelling for circuits.
Memories/Charge-based, Resistive/Capacitive
- URV: Compact modeling of neuromorphic devices memristors.
- UGR: Embedded memory and compute-in-memory on FDSOI; 2D/CMOS hybrid memory, sensing and neuromorphic macros.
Very low power devices
- URV: Modeling of very low power devices
- UGR: Near-/sub-threshold CMOS and 2D devices; ultra-low-power edge sensing and processing.
High temperature electronics
- URV: Modeling of high temperature operation in FET devices
- UGR: High-temperature operation and reliability of wide-bandgap and heterogeneous semiconductor devices.
Others
- UGR: Predictive modelling and PDK-ready compact models linking emerging devices with CMOS design flows.
Main expertises
Micro-nano-bio Sensors & Systems
- URV: Technology and simulation of several types of bio-sensors.
- UGR: Graphene electrolyte-gated FET biosensors; functionalization, microfluidics, portable readout and wafer-level QC/classification.
Energy Harvesting
- URV: Technology of nanostructured organic solar cell.
RF devices & circuits
- URV: Compact modeling of devices for RF and microwave operation, in particular HF MOSFETs, GaAs HEMT and GaN HEMT.
- UGR: GaN HEMTs; RF electrical characterization; oscillator/phase-noise and low-frequency-noise structures.
Photonics devices
- UGR: Nanosecond laser processing and optical/Raman characterization of 2D semiconductor materials.
Power devices
- URV: Compact model of power devices, such as LDMOSFETs and GaN HEMTs
- UGR: AlGaN/GaN HEMT modelling and device engineering.
Flexible electronics
- URV: Physics and modeling of devices for flexible electronics.
- UGR: Inkjet printing and low-temperature processing capabilities for 2D-material and sensor structures.
Others
- UGR: CITIC-UGR micro/nanofabrication: ALD/PE-ALD, CVD, RIE, evaporation, lithography, laser annealing and wire bonding; advanced electrical/noise and materials characterization.
Research interests
Micro-nano-bio Sensors & Systems
- URV: Technology improvement and modeling of bio-sensors, in particular OECT based ones.
- UGR: Wafer-scale biosensor platforms; biofunctionalization; Debye/interface engineering; reproducibility, ageing, regeneration and point-of-care systems.
Energy Harvesting
- URV: Technology improvement and modeling of organic solar cells.
RF devices & circuits
- URV: Improvement of compact models for RF and microwave operation, including noise.
- UGR: RF/mm-wave 2D and III-N devices; noise-aware design and sensor/RF co-integration.
Photonics devices
- UGR: 2D optoelectronics, photonic/CMOS co-integration and laser-defined nanostructures.
Power devices
- URV: Compact model of power devices, such as LDMOSFETs and GaN HEMTs.
- UGR: High-linearity/high-efficiency GaN devices; reliability and heterogeneous integration with CMOS.
Flexible electronics
- URV: Physics and modeling of devices for flexible electronics.
- UGR: Flexible and wearable 2D/GFET sensors; low-temperature fabrication on alternative substrates.
Others
- UGR: Pilot-line-compatible process control, metrology, reproducibility and reliability for emerging materials and devices.
Main expertises
Smart systems
- UGR: Portable GFET sensor platforms; sensor arrays; embedded/edge readout; multidisciplinary smart-system demonstrators.
Systems design
- UGR: Device-to-system co-design for sensors, memories and neuromorphic demonstrators; CMOS/2D test-chip definition.
Heterogeneous Integration, & Advanced Packaging
- UGR: BEOL 2D/CMOS co-integration (+QCHIP); FAMES pilot-line test structures and electrical/noise validation; microfluidics, wire bonding, chip carriers and packaging.
Research interests
Smart systems
- UGR: AI-assisted sensor systems, multimodal sensing, edge inference and closed-loop smart devices.
Systems design
- UGR: Design-enablement/PDK flows linking TCAD and compact models to circuits and system demonstrators.
Heterogeneous Integration, & Advanced Packaging
- UGR: Scalable <400 °C heterogeneous integration; 2D/CMOS/eNVM/sensor macros; advanced packaging, reliability and pilot-line qualification.