Beyond CMOS
Competences
Neuromorphic Computing THM

  • Modeling ofmemristor-based ANN with inherent stochastic learning
  • Modeling and simulation of various synaptic devices
  • Simulation, modeling and design of ANN
  • Organic synaptic devices

GINP

  • IMEP-LaHC: Device modelling and simulation of Oxide based ReRAm
  • LMGP: Multilevel analogue type resistive switching devices

IUNET

  • Politecnico of Milano
    • Neuromorphic devices: fabrication and characterization
    • Neuromorphic circuits: design and simulations
  • University of Udine
    • Ferroelectric based memristors: Ferroelectric Tunnelling Junctions (FTJs) and FeFETs
  • University of Modena and Reggio Emilia
    • Neuromorphic circuit design and simulation

RWTH

  • Coordinator of large German project “NEUROSYS”: Neuromorphic Hardware for Autonomous Artificial Intelligence Systems

FZJ

  • Synapse and neuron devices
  • Memristor devices and their integration with CMO

UAB

  • Resistive switching devices (ReRAM): characterization and modeling.

Uppsala University

  • Tactile perception and artificial tactile peripheral nervous system
  • Full inorganic flexible memory device

Tyndall

  • Multi-level Non-volatile memory; Device design and fabrication (micrometre and nanometre scales), structural and electrical characterisation of materials and devices, performance analysis and modelling
  • Synaptic Transistors
  • Ferroelectric and Multiferroic materials
  • Atomic-scale simulations of materials (semimetals, semiconductors, oxides, organic materials, etc) including the effects of doping, vacancies and other defect types. Also, atomic-scale quantum transport simulations of nanoelectronic devices, including field-effect transistors, heterostructures, memories, metal-material interface, spin-based devices.

University of Twente

  • Device architectures
  • Device fabrication,
  • Network architectures,
  • AI

URV

  • Design and simulation of neuromorphic circuits using organic and oxide devices

UGR

  • UGR: Fabrication and characterization of neuromorphic circuits using alternative materials

University of Glasgow

  • Simulations of RRAM
  • Simulation and Fabrication of hybrid (organic/inorganic) memories

ICN2

  • Ferroelectric domain physics
  • Ferroelectric domain wall physics
  • Self-power electronics based on toxic-free 2D ferroelectric and ferroic materials (oxides, halide perovskites and MXenes)
Phonon engineering  Warsaw University of Technology

  • Fabrication of phononic crystals using ultra high resolution e-beam lithography and anisotropic and highly selective silicon etching

UAB

  • Multiscale (ab initio, molecular dynamics, finite elements) determination of thermal transport coefficients and heat flows.

Uppsala University

  • Simulation and engineering of thermal conduction in nanostructures

UGR

  • Phonons in confined systems

ICN2

  • Phonon transport in layered materials
  • Nanoscale thermal transport physics and instrumentation
  • Optomechanics
  • Topological phononics
  • Thermal properties of ferroelectrics and antiferroelectrics
  • Electrocaloric effect
  • Direct Spatially resolved Phonon detection by EELS-STEM
Small slope switches-NW/TFET/NEMS THM

  • Simulation and modeling of TFET, JL-FET, SB-FET, NW, RFET

GINP

  • IMEP-LaHC: Simulation of steep slope device with NEGF

UCL

  • Phase change materials (VO2 )

IUNET

  • University of Udine
    • Modelling and simulations of:
      • Tunnel-FETs
      • Negative Capacitance FETs
      • Piezoelectric FETs
  • University of Pisa
    • Modeling of devices based on tunnel barriers with non-equilibrium Green’s functions tools (in house nanotcad VIDES) and with commercial device simulator
  • University of Modena and Reggio Emilia
    • Device and mixed Device-circuit modeling and simulations
    • Noise and Variability analysis

Warsaw University of Technology

  • Reliability and variability of TFET devices and structures (i.e., CV/IV characterization, Split-CV, and Charge Pumping), extraction of electrical properties of fabricated materials and structures, transport mechanisms identification
  • Design and modeling of transport in TFET

FZJ

  • NW transistors
  • TFETs

Tyndall

  • Device design and fabrication (micrometre and nanometre scales), structural and electrical characterisation of materials and devices, performance analysis and modelling
  • Characterisation and modelling of devices (e-beam lithography, sub 10nm wafer scale processing); Strong track record in Si processing, device fabrication and electrical test; Optimise process parameters
  • Material/process specific metrology: design and experimentation. Electron beam lithography (EBL). Nanoscale processing: etching, lift off. Crossover of top-down and bottom-up approaches

University of Twente

  • Ferroelectrics-based devices;
  • Piezoelectric-based devices;
  • Device architecture
  • Device fabrication
  • Device modeling

UGR

  • Monte Carlo simulation of TFETs and NWs

UVR

  • Physically-based compact modeling of TFETs

University of Glasgow

  • Electronic transport simulation using NEGF solvers.
  • Simulation using self-consistent Schrödinger Poisson solvers

ICN2

  • Atomic scale STEM related characterization of the related heterostructure
  • Nano-optoelectromechanical systems (NOEMS)
Alternative materials-2D layers GINP

  • IMEP-LaHC: Quantum simulation of 2D material device (Graphene, MoS2 etc
  • IMEP-LaHC: Complex dielectric permittivity measurement specific samples and in-situ
  • LMGP: Lamellar dichalcogenides by Atomic Layer Deposition

UCL

  • Graphene

IUNET

  • University of Udine
    • Graphene and 2D gapped materials transistors
    • Resistance in metal-2D material contacts
  • University of Pisa
    • Modeling of devices based on 2D materials, on topological insulators
  • University of Modena and Reggio Emilia
    • Electrical characterization and modeling
  • Politecnico of Milano
    • Development of devices based on 2D semiconductors

Warsaw University of Technology

  • Integration of 2D materials (molybdenum sulfide – MoS2, and graphene) and nanocrystals (Si, SiC) for modern optoelectronic and photonic structures
  • Graphene transfer onto Si substrate

RWTH

  • 2D materials based devices and characterization
  • Participant in:
    •  Graphene Flagship
    • 2D Experimental Pilot line
    • other EU/national projects

UAB

  • Electrical characterization of 2D nanodevices.
  • Development of specialized characterization set-ups.

Uppsala University

  • Graphene and transition metal dichalcogenide
  • Sputter deposition of sulfide-based 2D materials

Tyndall

  • Developing in the next generation of logic switches which will be used in applications, covering: nanoelectronics, flexible electronics, mobile communications and low power sensor technologies.
  • Characterisation and modelling of devices fabricated from 2D Materials (e-beam lithography, sub 10nm wafer scale processing); Strong track record in Si processing, device fabrication and electrical test;
    Optimise process parameters; Electrical test at cryogenic temperatures and understand the physics of device behaviour
  • Atomic-scale simulations of materials (semimetals, semiconductors, oxides, organic materials, etc) including the effects of doping, vacancies and other defect types. Also, atomic-scale quantum transport simulations of nanoelectronic devices, including field-effect transistors, heterostructures, memories, metal-material interface, spin-based devices.
  • Device design and fabrication (micrometre and nanometre scales), structural and electrical characterisation of materials and devices, performance analysis and modelling
  • ALD Wafer Scale Growth of 2D Materials
  • 2D Materials for RF applications; scalability for low cost manufacture (Spectroscopic Ellipsometry, MicroRaman Spectroscopy, Infrared Spectroscopy Optical Spectrophotometry)

University of Twente

  • Atomic layer deposition of ultra-thin films (insulators, semiconductors, conductors)

UGR

  • Growth, characterization of 2D materials. Fabrication of electron devices based on 2D materials. Simulation of 2D materials and 2D materials devices (ab-initio, Monte Carlo and TCAD).
  • Monte Carlo simulation of III-V based devices (TFETs)

UVR

  • Adaptation of Si MOSFET models to TMD MOSFETs

ICN2

  • Ultrafast processes in graphene and related 2D materials
  • Polycrystalline and amorphous 2D materials
  • Free-standing oxide layers
  • Domain Walls/oxide interfaces
  • Thermal and elastic properties characterization
  • 2D ferroelectric materials and MXEnes, Pb-free materials
Novel devices for ultra-low power IUNET

  • University of Bologna
    • Solution of the Schrödinger/Poisson problem with the Non-Equilibrium Green’s Function (NEGF) formalism and implementing different Hamiltonians: non-parabolic effective mass, k*p, tight-binding
  • Politecnico of Torino
    • Design and simulation of molecular nanogap devices
  • University of Modena and Reggio Emilia
    • Physics-based and compact modeling of memristive devices

FZJ

  • Nanowire FETs based on high mobility materials

VTT

  • Silicon nanofabrication

University of Twente

  • Ferroelectrics-based devices;
  • Piezoelectric-based devices;
  • Device architecture
  • Device fabrication
  • Device modeling

University of Glasgow

  • Density Functional Theory and Drift-Diffusion simulations

ICN2

  • Spin, spin waves and heat interactions
  • Computational nanoelectronics from ab initio
  • Computational spintronics and electronics
  • Self-power electronics based on 2D ferroelectric and ferroic materials (oxides, halide perovskites and MXenes)
1D IUNET

  • University of Udine
    • Semi-classical and quantum transport in 1D systems
  • University of Bologna
    • Homemade solver of the Boltzmann Transport Equation for nanowires

Uppsala University

  • Advanced silicon nanofabrication technology
  • Other 1D semiconductor nanostructures and fabrication
  • Devices based on carbon nanotubes and silicon nanowires
  • Electronics of optoelectronics of 1D structures and devices
  • Spatially and temporally resolved spectroscopy

University of Glasgow

  • CNT-based transistors and interconnects
  • Devices based on carbon nanotubes and silicon nanowires

ICN2

  • Atomic scale STEM related characterization of Nanowires and nanowire network systems
  • Halide perovskites, Toxic-free halide perovskites, ferroelectric halideperovskties
Quantum Technologies & Very low temperature electronics GINP

  • IMEP-LaHC: Electrical characterization at very low temperature (<10K) of transistors for CMOS circuit addressing Qbits. Compact modelling for circuit simulation at very low T

IUNET

  • University of Bologna
    • Time-dependent solution of the Schrödinger equation for the simulation of quantum bits
  • University of Padova
    • Low temperature measurements allowed by cryogenic probe-stations capable of sustaining temperatures as low as 7 K for prolonged measuring sessions. Electrical connections are provided by DC or RF probes. Optical coupling can be attained either by a dedicated optical fiber placed inside the vacuum-chamber or by leveraging an optical window placed on top of the sample stage.

RWTH

  • Quantum Photonics

FZJ

  • Cryogenic CMOS
  • Toplogical insulators for quantum computing
  • Superconducting quantum computing

Uppsala University

  • Advanced silicon nanodevice and nanofabrication technology

VTT

  • Superconducting devices

Tyndall

  • Site-controlled quantum dots, which were proven as efficient single and entangled photon emitters, both by optical excitation and electrically driven.
  • Modelling of site-controlled QD system demonstrating single and entangled photon emission
  • Expertise in atomistic modelling, in particular using methods from first-principles. Study the materials without any input parameters to predict and tune the required properties. Apply to enhance the oscillator strength and engineer external coupling
  • Cryoelectronics for quantum technology.
  • Electrical test at cryogenic temperatures and understand the physics of device behavior.
  • Quantum electronic devices and sensors. Material characterisation – electrical and TEM. Modelling of functional devices (continuum based modelling) In-situ and 3D imaging using electron and ion beam microscopy. Correlative characterisations: different modes of analysis at different length scales to obtain additional information. Material/process specific metrology: design and experimentation. Electron beam lithography (EBL). Nanoscale processing: etching, lift off, chemical surface modifications. Crossover of top-down and bottom-up approaches

University of Twente

  • Single-atom transistors (fabrication and cryogenic testing)

University of Glasgow

  • Non-Equilibrium Green’s Function Simulations
  • Quantum Simulations
  • Superconducting qubits simulations
  • Semiconductor qubits

ICN2

  • Rare-earth ions
  • Quantum computation
  • Atomic scale STEM related characterization of quantum systems
  • Phonons impact on noise in quantum systems
More Moore
Competences
Logic Nanodevices& circuits THM

  • Simulation and modeling of multiple-gate FET, NW-FET
  • Fast multiscale simulation approach for quantum transport in ultrashort MOSFETs

GINP

  • IMEP-LaHC: General and historic expertise in CMOS device electrical characterization, modelling and simulation. Circuit simulation in VerilogA using compacts models (some in-house)

KTH

  • FD SOI CMOS technology platform
  • SiGe and Ge MOSFET devices

IUNET

  • University of Modena and Reggio Emilia
    • Device and mixed Device-circuit modeling and simulation
    • Electrical characterization at wafer level
    • Noise and Reliability modeling
  • University of Bologna
    • Cell-based design flow for implementation of digital and analog low-power IPs in BCD  and CMOS technology, in cooperation with STMicroelectronics in the framework of ECSEL JU R2POWER300 and R3POWERUP projects and of the  Joint ARCES-ST lab
  • University of Calabria
    • Device-circuit simulations
    • Electrical characterization at wafer level
    • Reliability modeling
  • University of Roma “La Sapienza”
    • CMOS digital standard cell design
    • Digital circuit characterization and modeling
    • Power optimization of digital circuits
  • Politecnico of Torino
    • VLSI architectures, mixed-signal design,
    • Logic Synthesis and Optimization,
    • Process Variation-Aware Design
  • University of Udine
    • III-V and 2D semiconductor based transistors
    • Fin-FETs, nanowire and stacked nanowire FET
  • University of Pisa
    • Multiscale modeling of nanoscale transistors from ab-initio simulations of materials to device simulation with non-equilibrium Green’s functions tools (in house nanotcad VIDES) and with commercial device simulator
  • University of Padova
    • FINFETs and scaled MOS devices

Warsaw University of Technology

  • Materials synthesis and growth (PECVD, PVD, thermal methods)
  • MOS test devices processing
  • Reliability and variability of MOS/MIS devices and circuits (i.e., CV/IV characterization, Split-CV, and Charge Pumping), extraction of electrical properties of fabricated materials and structures, conduction mechanisms verification
  • Ultra-shallow RF plasma implantation of nitrogen/fluorine for improvement of electro-physical properties of MOS structures or modification of growth kinetics of particular dielectric layers
  • Semiconductor nanocrystals (Si, SiC, ZnO) embedded in dielectric ensembles – technology and characterization
  • Optimization and design of electrical properties of fabricated materials using Design-of-Experiments (DoE) method

RWTH

  • Transistors
  • Inverters
  • Ring oscillators
  • High k-dielectrics

NCSRD

  • Nanowire MOSFETS

UAB

  • Reliability of CMOS devices and integrated circuits.
  • Electrical characterization and Modeling of 2D semiconductor based FETs for digital applications
  • Development of specialized characterization set-ups and smart analysis techniques
  • Modelling of quantum transport and simulation of nanometer scale devices using a multi-scale approach from ab-initio methods (SIESTA, BITLLES) to compact modelling.
  • Modelling and simulation of ultra-small SOI-based MOSFETs in the scaling limit.
  • Development of transistors for low-power switching applications based on ferroelectric materials

University of Liverpool

  • Design for Test (DFT) architectures, 3D circuits, reliability
  • Novel hardware security solutions
  • Process, Voltage and Temperature (PVT) Variation Aware Test

IEMN

  • RF and mixed signal circuit design for telecommunications

VTT

  • Nano CMOS and FDSOI circuits, sub- and near threshold ULP circuits, neural processing units

Tyndall

  • Gate stack development for III-V nanowire CMOS technology, combining RF and logic on the one Si chip. Modelling and engineering of interfaces and interface states.
  • Characterisation and modelling of devices (e-beam lithography, sub 10nm wafer scale processing); Strong track record in Si processing, device fabrication and electrical test; Optimise process parameters; Electrical test at cryogenic temperatures and understand the physics of device behaviour.

University of Twente

  • C-V and I-V characterization;
  • Interface state measurement, reliability

UVR

  • Development of the first physically-based compact models for cylindrical nanowire MOSFETs and junctionless nanowires

UGR

  • Development of circuits based on reconfigurable FET devices

University of Glasgow

  • Electronic transport simulation using NEGF solvers.
  • Simulation using self-consistent Schrödinger Poisson solvers
  • Terahertz nonlinearities

ICN2

  • Reconfigurable logics
  • Electronic transport simulation using NEGF solvers.
  • Simulation using self-consistent Schrödinger Poisson solvers
  • Terahertz nonlinearities
  • Atomic scale STEM related characterization
Memories GINP

  • IMEP-LaHC: Device modelling and simulation of Oxide based ReRAm
  • IMEP-LaHC: New architectures of memories (Z²FET) for DRAM
  • LMGP: Valence change nanoionic resistive switching devices

UCL

  • Design of SRAMs in advanced CMOS technologies

IUNET

  • University of Modena and Reggio Emilia
    • Device-circuit simulations
    • Electrical characterization at wafer level
    • Material-device simulations
  • University of Bologna
    • Modeling and simulation of advanced non-volatile memory concepts (NVM) for new applications, such as ultra-low power computing, high-density and low-cost data storage, novel functions, communications and consumer electronics
  • University of Calabria
    • Device-circuit simulations
    • Electrical characterization at wafer level
  • University of Ferrara
    • Electrical characterization and modeling of non-volatile memories reliability
  • Politecnico of Milano
    • Design of memory-based hardware security primitives
    • Modeling and simulation of advanced Flash and emerging memory devices
  • University of Roma “La Sapienza”
    • TACD, characterization, engineering, reliability test
  • Politecnico of Torino
    • Nanomagnetic memories
  • University of Udine
    • Floating-gate and charge-trap non volatile memories
    • Ferroelectric based memories
  • University of Pisa
    • Three dimensional modeling of non-volatile memories
  • University of Padova
    • Non-Volatile Floating gate memories: new issues in 3D devices

Warsaw University of Technology

  • Materials synthesis and growth (PECVD, PVD, thermal methods)
  • MOS test devices processing
  • Reliability and variability of MOS/MIS devices and circuits (i.e., CV/IV characterization, Split-CV, and Charge Pumping), extraction of electrical properties of fabricated materials and structures, conduction mechanisms verification
  • Ultra-shallow RF plasma implantation of nitrogen/fluorine for improvement of electro-physical properties of MOS structures or modification of growth kinetics of particular dielectric layers
  • Semiconductor nanocrystals (Si, SiC, ZnO) embedded in dielectric ensembles – technology and characterization
  • Optimization and design of electrical properties of fabricated materials using Design-of-Experiments (DoE) method

RWTH

  • Non-volatile memory devices

FZJ

  • Ferroelectric devices

NCSRD

  • Si nanocrystal memories, Phase-change memories

UAB

  • Resistive switching devices (ReRAM): characterization and modeling.

Uppsala University

  • Silicon-compatible memory devices
  • Full inorganic flexible memory device

University of Liverpool

  • ReRAM, ALD processed dielectrics and characterization

VTT

  • Memristors

Tyndall

  • Ferroelectric and Multiferroic materials
  • Device design and fabrication (micrometre and nanometre scales), structural and electrical characterisation of materials and devices, performance analysis and modelling; Spintronics

UGR

  • 1T-DRAM memories (devices and applications)

University of Glasgow

  • Molecular based memories
  • Flash memories: variability and reliability
  • Ferroelectric memory devices
  • Self-power electronics (transistors) based on 2D ferroelectric and ferroic materials (oxides, halide perovskites and MXenes)

ICN2

  • Magnetic random access memories
  • Modeling for magnetic, ferroelectric, and multiferroic materials.
  • Simulation of spin torque phenomena (STT-MRAM, SOT-MRAM)
  • Ferroelectric memory devices
  • Self-power electronics (transistors) based on 2D ferroelectric and ferroic materials (oxides, halide perovskites and MXenes)
Very low power devices  Uppsala University

  • Low power intrabody network

Tyndall

  • Spintronics; Device design and fabrication (micrometre and nanometre scales), structural and electrical characterisation of materials and devices, performance analysis and modelling.
  • Exploit fundamental understanding through atomic scale modeling for electronic devices and nanoscale systems to propose new materials and novel configurations for nanoelectronic devices, where their entire functionality could be driven from physical effects corresponding to a few atoms. Develop an atomic scale model to evaluate electrical and mechanical properties of proposed material system

ICN2

  • Phonon-electron and phonon-photon coupling in nano-optoemectronic devices
  • Materials and devices for selff-power electronics (transistors, memoristors) based on 2D ferroelectric and ferroic materials (oxides, halide perovskites and MXenes)
High temperature electronics GINP

  • IMEP-LaHC: Expertise in SiC (part of manufacturing, electrical characterization and modelling). Collaboration on GaN

ICN2

  • Hot carriers in graphene and related 2D materials
More than Moore
Competences
Micro-nano-bio Sensors & Systems THM

  • MEMS
  • Pressure, Infrared, Temperature Sensors
  • MEMS process and device modeling

GINP

  • IMEP-LaHC: Development of novel sensor architectures and new approaches of more efficient dynamic signal for detections. Electrical characterization of sensors
  • IMEP-LaHC:Design of microelectrodes, DEP
  • LMGP: Deposition of Oxide thin films and nanostructures for gas sensors
  • LMGP: Integration of seminconducting nanonets (nanowire networks)

KTH

  • Implantable bio-sensors
  • Si nanowire top-down fabrication

UCL

  • Simulation, fabrication, characterization of biological, chemical and physical sensors, notably in SOI CMOS compatible technology or for harsh environments (temperature, radiations)

IUNET

  • University of Modena and Reggio Emilia
    • Modeling and simulation of ion, particle and bio-sensor devices at device level (sensitivity, selectivity, noise)
    • Extraction of equivalent circuits
  • University of Bologna
    • Ultra-low-noise and high-accuracy readout circuits for sensors and biosensors
    • High performance analog front-end design for industrial applications
    • Characterization of sensors and circuits
    • CMOS-integrated readout circuits for capacitive/resistive/resonant (current/magnetic/strain/bio-) sensors
    • Piezoelectric sensors
    • Design and prototyping of piezoelectric transducers
    • Design of CMOS capacitive interfaces for 3D IC wireless connection, in cooperation with STMicroelectronics in the framework of JTI ESiP project, and of CMOS active bio-electrodes for brain electrical imaging
  • Politecnico of Milano
    • MEMS accelerometers, gyroscopes, magnetometers, ultrasonic transducers, MEMS resonators for real time clocks and other timing applications
  • University of Perugia
    • Radar sensors and microwave radiometer sensors
    • Radiation sensors modeling (TCAD) and design
  • University of Roma “La Sapienza”
    • Engineering, Electronic Interface, sensor fusion
    • Growth of low temperature silicon nanowires
  • Politecnico of Torino
    • Electrochemiluminescent and electrochemical sensors, nanogap biomedical sensors,
    • wireless sensor network design,
    • neural network sensors,
    • Integrated Sensors and Sensor Fusion
  • University of Udine
    • modeling of potentiometric chemical/bio-sensors and bio-actuators
    • Modeling of nanodevices for neural recording

Warsaw University of Technology

  • Graphene transfer and etching;
  • Low negative impact of fabrication on graphene parameters

RWTH

  • Photodetectors
  • Pressure sensors
  • Humidity sensors
  • Strain sensors

NCSRD

  • Thermal sensors (gas and liquid flow, chemical, acceleration and  pressure sensing), Microfluidics, Capacitive pressure sensors, bio-sensors,
  • RF-based sensors

Uppsala University

  • Silicon-based nanobiosensor design and fabrication
  • Microchip-based biosensor
  • Electro-fluidic devices
  • High dimensional biology

University of Liverpool

  • Nanowire Sensors (detect changes in surface potential)
  • Compact On-Chip Fluorescence by combining wafer bonding and microfluidics
  • DNA electronics (single molecule and polymers)
  • Surface chemistry for bio-sensors
  • Bacterial and Fungal Bio-Simulation
  • Molecular Motors (Myosin-Actin)

VTT

  • MEMS, bolometers, superconducting sensors, biosensors

Tyndall

  • Electrochemical sensors
  • Silicon and polymer microneedles for smart patches,

University of Twente

  • Lab-on-chip,
  • Organ-on-chip: system architecture, prototyping, applications

UGR

  • Biosensors based on 2D materials for early diagnosis
  • Gas sensors based on 2D materials (electronic nose)

University of Glasgow

  • Silicon-based nanobiosensor design and fabrication
  • DFT calculations of materials properties
  • Chemical sensors simulations

ICN2

  • DFT calculations of materials properties
  • Chemical sensors simulations
  • Graphene based electrodes and Graphene SGFET for biosensing
  • Aptamer-based inkjet-printed flexible microfluidic devices
  • Graphene-based electrochemical biosensors

VIK-ETT

  • Biosensor development, thin film layers development, nanometrology
Energy Harvesting GINP

  • IMEP-LaHC: Full expertise in piezo mems and nems characterization and modelling, assisted by state of the art AFM for electrical characterization
  • IMEP-LaHC: Photovoltaics: 3D electromagnetic modelling coupled with TCAD tools for PV cells simulation, characterization (quantum efficiency, reflectivity, SHG, transport mechanisms, passivation….)
  • IMEP-LaHC: Fully coupled mechanical/piezoelectrical/semi-conducting FEM simulation of nanostructures, electromechanical response
  • IMEP-LaHC: Characterization under mechanical stress (pressure, flexion)
  • IMEP-LaHC: AFM characterization: PFM, KPFM, CAFM, SMIM
  • LMGP: All-oxide solar cells as PV harvesters for outdor and indoor applications
  • LMGP: Piezoelectric nanogenerators made of ZnO nanowires

KTH

  • Low power circuit design

UCL

  • Solar cells (black Si, CIGS, CZTS) : fabrication, characterization, simulation
  • Design of ULP CMOS harvesters for light, thermal and RF energy

IUNET

  • University of Modena and Reggio Emilia
    • HW-SW co-design
    • Innovative transducers
  • University of Bologna
    • Nano-power and ultra-low voltage integrated circuits for energy harvesting and power management
    • Multi-source energy harvesting circuits
    • RF energy harvesting (circuits for RF power transfer down to uW)
  • University of Padova
    • Power conversion topologies and techniques for Wiegand transducers and photovoltaic cells
  • University of Perugia
    • Wireless Power Transfer systems
    • Wireless Power lines
  • University of Roma “La Sapienza”
    • Solar cell
    • Thermoelectric cells
  • University of Padova
    • Power conversion topologies and techniques for different renewable energy sources
    • Low power fully integrated dcdc converters for TEG harversters
    • Conventional characterization techniques: IQE, EQE, reflectivity, light/dark I-V measurements, C-V measurements, transient Voc measurements
    • Advanced characterization techniques: photocurrent spectroscopy, capacitance deep-levels transient spectroscopy (C-DLTS), spatially and wavelength-resolved electro-luminescence measurements
    • Development of custom experimental setups for interfacing with sample-specific geometries and structures
    • Evaluation of the degradation mechanisms limiting the short- and long-term reliability of solar cells:
      • aging under different temperature, bias and optical excitation conditions
      • analysis of the variation of device performance during accelerated aging experiments
    • Development of degradation models based on experimental data and theoretical analyses

Warsaw University of Technology

  • Energy harvesters performance characterization
  • Fabrication of suspended thin-film Si membranes

NCSRD

  • Piezo-resistive devices, electromagnetic energy harvesting

Uppsala University

  • Thermoelectrics
  • Triboelectric nanogenerators (TENG)
  • RF energy harvesting

University of Liverpool

  • Materials and devices for energy harvesting using rectenna technology
  • Materials for PV

IEMN

  • Silicon-based thermoelectricity using nano-phononics
  • Thermoelectricity based on thermionic emission

VTT

  • Thermoelectrics, work function harvesting, supercapacitors

Tyndall

  • Thermoelectric energy harvesting
  • Supercapacitors
  • Piezoelectric harvesting particularly in the area of AlN
  • Microelectromagnetic Energy Harvesters

University of Twente

  • PV on chip

University of Glasgow

  • Ground state DFT calculations, and Molecular Dynamics

ICN2

  • Spin caloritronics
  • Thermoelecticity
  • Ground state DFT calculations, and Molecular Dynamics
  • Piezo electricity
  • (Ultrafast) energy, charge and heat dynamics in condensed matter
  • Bulk photovoltaic effect in ferroelectrics
  • Piezoelectricity and Flexoelectricity
  • Atomic scale STEM related characterization
  • Photovoltaics, solution processable materials for printed perovskite solar cells.
  • Integration of energy harvesters with photovoltaics ( solar, mechanical, vibrational energy, etc.)

VIK-ETT

  • Energy Harvesting in applied sensors
RF devices & circuits GINP

  • IMEP-LaHC: TeraHertz characterization of material and devices
    • THz characterization of material in the 0.2- 3 THz band
    • Characterization of THz detectors and emitters
  • IMEP-LaHC: Passive circuits
  • IMEP-LaHC: RF characterization up to 110 GHz (+probe station)
  • IMEP-LaHC: RF Design

KTH

  • Low power circuit design

UCL

  • Modelling and characterization of RF passive and active devices
  • Design of CMOS RF circuits and sub-systems

IUNET

  • University of Modena and Reggio Emilia
    • Device simulations
    • Design and characterization of transceivers operating at RF and mm-waves
    • Electrical characterization at wafer level (DC, pulse, I-DLTS)
    • RF Load-pull measurements (1.7GHz-2.5GHz, 10GHz)
  • University of Bologna
    • UWB localization systems at cm-level
    • Experience in IC circuit design for RF applications. Among the blocks composing the front-end of RF transceivers, the circuit activity was principally focused on the design of VCOs and frequency synthesizers
  • University of Padova
    • Design of RF and mm-wave integrated circuits in CMOS, BiCMOS and bipolar technology
    • Analysis of the trapping processes that limit the dynamic performance of the devices, based on current-DLTS, capacitance-DLTS, optical-DLTS, backgating investigation.
    • Development of physical models of the charge-trapping processes.
    • Study of the interface traps by C-V, Dit and Vth transient measurements.
    • Analysis of issues related to devices with Schottky gate.
    • Study of hot electron effects, by means of electroluminescence measurements.
    • Evaluation of the long-term reliability of packaged devices by means of dedicated burn-in systems equipped with DC and RF stress capabilities and with variable-temperature stages.
    • Long-term high-temperature storage tests for devices on-wafer. (up to 1100 °C).
  • University of Perugia
    • Building block design and testing (LNA, mixers, VCO…) on cellulose-based materials,
    • reconfigurable power amplifiers,
    • tunable matching networks,
    • RFIDs and RFID sensors
    • Chipless RFIDs
  • University of Roma “La Sapienza”
    • TCAD simulation of high frequency response of semiconductor structure
  • Politecnico of Torino
    • Power amplifier design on III-V and III-N platforms,
    • low-noise amplifier design,
    • RF and microwave characterization and modeling,
    • physics-based modeling of III-V and III-N devices,
    • H-terminated diamond FETs
  • University of Udine
    • Modeling of transistor noise
    • RF circuit design
    • High Speed Serial links

RWTH

  • RF Transistors
  • RF diodes
  • Characterization up to 11GHz

NCSRD

  • RF passive devices (co-planar waveguides, filters, antennas)
  • Local low-loss RF substrate for the on-chip integration of devices

UAB

  • Modelling and simulation of graphene and post-graphene 2D materials based field effect transistors targeting RF applications

Uppsala University

  • Passive and active circuits

University of Liverpool

  • Antennas and rf power devices & technology

IEMN

  • Ultimate thinning and transfer bonding for enhanced RF performance

VTT

  • Active and passive components and circuits in RF, mm-wave and THz range, antennas

Tyndall

  • ALD Wafer Scale Growth of 2D Materials
  • 2D Materials for RF applications; scalability for low cost manufacture (Spectroscopic Ellipsometry, MicroRaman Spectroscopy, Infrared Spectroscopy Optical Spectrophotometry)
  • RF MEMS Switches
  • Hybrid SAW and EM resonators
  • RF tuning methods

University of Twente

  • RF MEMS device design, fabrication and characterization

UVR

  • Development of some of then first modeling frameworks for Multi-Gate MOSFETs at high frequencies

ICN2

  • Spin torque induced ferromagnetic resonance
  • Quantum control
  • Coupling phonons to RF
  • Terahertz spectroscopy and technologies
  • NFC/RFID wireless biosensors and gas sensors

VIK-ETT

  • RFID applications
Photonics devices GINP

  • IMEP-LaHC: Modelling of photodetectors (Ge, Si) or PV application, device electrical characterization, in particular in low temperature, focused on the degradation mechanisms of these device for reliability assessment
  • IMEP-LaHC: Integrated photonics :
    • Glass photonic (ion exchange, 3D integration)
    • Hybrid photonics (glass interposer, polymer-glass devices, wafer-bonding and 3D integration)
    • Silicon Photonics
    • Photonic based sensors
  • IMEP-LaHC: Photonic Design and test of optical and electro-optical functions
    • 3 D electromagnetic modelling for integrated optics
    • Characterization: integrated photonic characterization bench, digital transmission (Radio over Fiber, FFTH…) test benches
  • LMGP: Light emitting diodes made of ZnO nanowires
  • LMGP: Self-powered UV photodetectors made of ZnO nanowires

KTH

  • III-V epitaxy (MOVPE) of GaAs and InP-based materials and device structures
  • Edge-and surface-emitting lasers and detectors
  • Heterogeneous integration

UCL

  • Thin SOI photodiodes (UV to visible) with graphene gate, optical reflectors…
  • SOI waveguides with graphene modulators

IUNET

  • University of Modena and Reggio Emilia
    • Device simulation
    • Electrical and optical characterization
  • University of Bologna
    • Advanced architectures for silicon based solar cells and optcal MEMS theoretically analyzed by means of accurate TCAD simulations
  • University of Calabria
    • Device simulation
    • Electrical and optical characterization
  • University of Padova
    • Characterization, physical modeling, reliability and simulation of LEDs, laser diodes, solar cells, multi-quantum well solar cells and photodiodes based on various binary, ternary and quaternary material systems, such as GaN, GaAs, InP, Si and CdTe.
    • Electrical characterization capabilities: I-V (with fA resolution) executed in DC or pulsed mode, C-V measurements (from quasi-static to 20 MHz).
    • Conventional optical characterization: L-I, EL spectra, PL spectra (variable excitation wavelength).
    • Advanced optical characterization: spatially and wavelength-resolved EL imaging (through a scientific CCD camera), photocurrent spectroscopy, differential carrier lifetime analysis.
    • Defects characterization: light-CV measurements, C-DLTS, deep-level optical spectroscopy (DLOS).
    • Evaluation of devices performance in function of temperature (from 7 K to 650 K).
    • Characterization and modeling of the lifetime-limiting mechanisms in function of temperature, bias and optical excitation during device aging.
    • Physics-based numerical simulation of semiconductor devices through Synopsys Sentaurus or Apsys (from Crosslight) software suites.
  • University of Perugia
    • Multi-octave Analog laser predistortion for RoF systems
  • University of Roma “La Sapienza”
    • Characterization, Reliability test
  • Politecnico of Torino
    • Design of high-speed detectors,
    • electroabsorption modulators,
    • electro-optic modulators,
    • QW lasers,
    • III-N LEDs,
    • FIR image sensors on MERCATEL,
    • QW III-V solar cells,
    • passive element modelling and design
  • University of Udine
    • Modelling, characterization and optimization of photodetectors
    • Solar Harvesting, Optical Wideband Antenna, Rectenna

Warsaw University of Technology

  • Dielectric, conductive, and semiconductor materials synthesis for optoelectronic and photonic devices technology
  • Full line-up for optical characterization of fabricated materials and structures, i.e., optical spectroscopy, high-resolution laser spectroscopy, spectroscopic ellipsometry, refractometry, confocal microscopy, high-resolution spectrophotometer with a helium cryostat for absorption, and advanced spectrofluorometric system for emission/excitation/fluorescence kinetics measurements, Optical Backscattering Reflectometry (OBR)
  • Optimization and design of optical properties of fabricated materials using Design-of-Experiments (DoE) method, as well as commercially available software to obtain tailored properties (transparency, reflection, etc.) of obtained layers and periodic stacks that can be used in novel nanophotonic structures which possess tailorable and dynamically controllable spectral and angular optical properties
  • Design, modeling, and fabrication of nanophotonic multi-layer and metamaterial structures in thin- and ultra-thin regime (especially planar tunable hyperbolic metamaterials) based on novel semiconductor, dielectric, and conductive materials
  • Advanced design and modeling of semiconductor and photonic structures using in-house software development and commercially available capabilities (COMSOL, Macleod) based on well-established models of electromagnetic fields interact with matter
  • Design and simulation of photonic integrated circuits (PICs)
  • Fabrication of photonic elements and PIC based on Si, Ge, SiN
  • Optical and electrical characterization of photonic elements and circuits
  • Design and fabrication of diffractive optical elements, microlenses, holograms for visible and EUV wavelengths

RWTH

  • Silicon and silicon nitride photonics
  • 2D photodetectors
  • Multispectral photodetectors
  • High speed photodetection

FZJ

  • GeSn photonics

NCSRD

  • Solar cells, Theoretical modeling of waves in the micro- and nano-scale

University of Liverpool

  • Utilizing semiconductor optoelectronic devices / systems to realize compact Lab-on-chip equivalents for bio- and chemical sensors

IEMN

  • Electro-optical interposers for advanced packaging

VTT

  • Silicon photonics

Tyndall

  • Nanostructuring of CMOS compatible materials for applications in photonics. Design, fabrication and characterization of Photonic Integrated Circuits (PICs) and nanophotonic devices. The fabrication processes are typically based on electron beam lithography suite.

University of Twente

  • Photodiodes, SI light emitters, Si optocouplers

UGR

  • Photonic applications of 2D materials

UVR

  • Technology for highly efficient organic solar cells. Circuit-based modeling of these devices

ICN2

  • Nanopatterning surfaces and metamaterial design for photonic components
  • Photodetectors
  • Nonlinear light converters
  • Atomic scale STEM related characterization
  • Radiative cooling surfaces
Power devices KTH

  • SiC BJT and MOSFETs

UCL

  • Simulation and characterization of power devices in harsh environments (temperature, radiations)

IUNET

  • University of Modena and Reggio Emilia
    • Electrical characterization at wafer level (DC, pulse, I-DLTS)
    • Reliability modeling
    • Device simulation
  • University of Bologna
    • Characterization of power MOSFETs and IGBTs
    • Characterization of GaN HEMT and SiC power MOSFETs
    • Electrical and thermal analysis of packaged power devices
    • Characterization, physical modeling, reliability and simulation of Analysis of the trapping processes that limit the dynamic performance of the devices, based on current-DLTS, capacitance-DLTS, optical-DLTS, backgating investigation
    • Development of physical models of the charge-trapping processes
    • Study of the interface traps by C-V, Dit and Vth transient measurements
    • Analysis of issues related to devices with Schottky, insulated and p-type gate
    • Study of the lifetime-limiting mechanisms in GaN- and SiC-based transistors and diodes: time-dependent dielectric breakdown, instability of the p-type and insulator layers, hot electron effects (studied by electroluminescence)
    • Long-term high-temperature storage tests for devices on-wafer (up to 1100 °C)
    • Physics-based numerical simulation of semiconductor devices through Synopsys Sentaurus software suite
  • University of Calabria
    • Electrical characterization at wafer level
    • Reliability modeling
  • University of Padova
    • Characterization of power MOSFETs and IGBTs
    • Characterization of GaN HEMT power MOSFETs
    • Characterization, physical modeling, reliability and simulation of FETs – with and without gate insulator -, diodes and natural superjunctions based on various binary, ternary and quaternary material systems, such as GaN, GaAs, GaO and Si. Knowledge of electrical, optical, capacitive and thermal characterization techniques for the analysis of device performance, degradation and deep level concentration. Expertise in advanced characterization techniques, such as capacitive, current, transient, optical, admittance, photocurrent and interface states deep level spectroscopy, analysis of dynamic performance, spatially- and spectrally-resolved electroluminescence and photoluminescence – both front- and back-side
  • Politecnico of Torino
    • III-N power transistors,
    • Si power devices,
    • EMC integrated circuit design,
    • EMI characterization of integrated circuits
  • University of Pisa
    • Multiscale modeling (from ab-initio to circuit simulation) of devices based on GaN and SiC. Modeling of defects and traps in GaN and SIC

Warsaw University of Technology

  • Detailed electrical characterization, extraction of electrophysical parameters (static and pulse I-V, C-V, stress and sense, breakdown)

FZJ

  • SiC power devices

NCSRD

  • RF passives for power devices

University of Liverpool

  • Oxides and interfaces on GaN: materials characterization

Tyndall

  • SiC technology
  • Power supply-on-chip

University of Twente

  • Si, GaN device architecture and characterization

UVR

  • Co-author of the ASM HEMT compact model, standardized by the Compact Modeling Council as one of the two GAN mainstream models for microwave and poser applications
Flexible electronics THM

  • Simulation and modeling of submicron organic TFT devices
  • Non-quasistatic modeling of organic TFTs
  • Modeling variability of organic TFTs
  • Simulation of organic permeable-base transistors

GINP

  • LMGP: Deposition of thin oxide films by Spatial ALD, ALD and CVD. P-type oxides
  • LMGP: Composite materials (nanowires, nanoparticles, oxides)
  • LMGP: Flexible and stable fabrication of transparent electrodes based on metallic nanowire networks
  • LMGP: Nanonet-based devices
  • IMEP-LaHC: Passive circuits
  • IMEP-LaHC:  Antenna systems
  • IMEP-LaHC: RF design and characterization

KTH

  • Graphene based super capacitors

UCL

  • Ultra thinning of SOI CMOS dies to a few µm by XeF2
  • Transfer of high-quality monolayer graphene on flexible substrate

IUNET

  • University of Udine
    • Piezoresistance sensors based on 2D semiconductors
  • University of Modena and Reggio Emilia
    • Electrical characterization and modeling of printed devices
  • University of Padova
    • Characterization of organic devices for electronics (thin film transistor), optoelectronics (organic LEDs and light emitting transistors), and photovoltaics (polymeric solar cells, dye sensitized solar cells, perovskite solar cells).
  • Politecnico of Torino
    • Organic solar cells,
    • molecular organic devices
  • University of Perugia
    • Electronic on cellulose and on “non conventional materials” (cellulose as a paradigm)
  • University of Pisa
    • Ink-jet printed electronics based on 2D material

Warsaw University of Technology

  • TFT devices processing and electrical characterization
  • Reliability and variability of TFT devices and structures (i.e., CV/IV characterization, Split-CV, and Charge Pumping), extraction of electrical properties of fabricated materials and structures, transport mechanisms identification

RWTH

  • Flexible electronics with 2D materials

NCSRD

  • Organic light emitting diodes, organic photovoltaics

UAB

  • Electrical characterization and modeling of inkjet-printed devices, Organic TFTs.

Uppsala University

  • Nanomaterials, devices and systems
  • Flexible PCBs
  • Full inorganic flexible memristor device

University of Liverpool

  • Development of low-cost flexible organic circuits for use as key functional block in various mixed signal applications i.e. sensors and displays
  • Organic physical device modelling

VTT

  • Printed intelligence, roll-to-roll fabrication

University of Twente

  • P3HT OFETs & VOFETs (fabrication)
  • Device physics, characterization, Modelling, and TCAD

UGR

  • Development of sensors based on flexible substrates
  • Flexible Electrophoretic displays based on graphene and graphene-related devices.
  • Flexible transparent electrodes

UVR

  • Author of some of the mainstream models and direct parameter extraction methods for organic and oxide TFTs

University of Glasgow

  • Electronic properties from first-principles
  • Simulation of charge transport in organic matter (polaron transport)
  • 2D spintronics
  • Electronic properties from first-principles. Modeling different physical properties (structural, piezoelectric, magnetic, thermal, etc.)

ICN2

  • Electronic properties from first-principles
  • Simulation of charge transport in organic matter (polaron transport)
  • 2D spintronics
  • Electronic properties from first-principles. Modeling different physical properties (structural, piezoelectric, magnetic, thermal, etc.)
  • Graphene and 2D materials electronics
  • Flexible graphene solution-gated field-effect transistors
  • Flexible electronics based on 2D materials for interfacing with the nervous system; implantable medical devices
  • Hydrophobic micro-nanostructured films
  • Defectivity and dimensional metrology of nanopatterned devices
  • Nanoparticles-based printed passive components
  • Free-standing oxide films/membranes
  • Thermal and electronic (experimental) transport in disordered (and crystalline) organic matter
  • Stable organic glasses for optoelectronic and photovoltaic devices
  • Solution processable materials (2D, halide perovskites, oxides) for printed electronics (lab scale and larger areas): inks and pastes

VIK-ETT

  • Wearables, flexible PCBs, additive manufacturing technologies
Smart systems
Competences
Smart systems UCL

  • Design of CMOS systems-on-chip (analog, RF, digital, memories) especially in attached UTBB FD SOI with adaptive back bias

IUNET

  • University of Modena and Reggio Emilia
    • Circuit design
    • Architecture design
    • Electrical testing
  • University of Bologna
    • IoT sensor nodes with advanced power management for operation with uW energy harvesting
    • Energy autonomous nodes for IoT applications: wireless nodes with embedded sensing, processing, communication and actuating capabilities using energy harvesting from surrounding environment. Activity carried out in the framework of joint STMicroelectronics-ARCES laboratory also in the framework of ECSEL Connect project
  • University of Calabria
    • Circuit design
    • Architecture design
    • Electrical testing
  • Politecnico of Milano
    • MEMS systems (sensors + integrated or discrete electronics for specific final applications)
  • University of Perugia
    • Embedded system, Lab-on-chip building blocks
  • University of Roma “La Sapienza”
    • Design, engineering, algorithms and machine learning
  • Politecnico of Torino
    • Embedded systems,
    • Smart Systems for Robotics and Biomedical Applications
  • University of Pisa
    • Design and characterization of MEMS-based sensors (resonant mass sensors, accelerometers) and actuators (micro mirrors). Phononic devices modeling and characterization
  • University of Padova
    • Smart microgrids
    • Internet of energy (IoE)

Warsaw University of Technology

  • Design and assembly of dedicated measurement tools, power supplies, and embedded systems with the integrated optoelectronic and photonic devices; SMD assembly and reliability tests

NCSRD

  • Mass flow meter (applications in automotive and respiration control), bioanalytical microsystems

Uppsala University

  • Neuromorphic skin
  • Intelligent prosthetics

University of Liverpool

  • Utilizing semiconductor optoelectronic devices / systems to realize compact Lab-on-chip equivalents for bio- and chemical sensors
  • Dielectrophoresis; characterisation of cells and nanoparticles; automated bioreactors; biomimetic cell culture, microfluidic cell handling

IEMN

  • Smart packaging
  • Laser-based micromachining for advanced packaging

VTT

  • Wireless and zero power systems, multi-modal systems

Tyndall

  • Edge Processing Interoperability Platform
  • Smart self powered mobile embedded systems for Condition Based Monitoring
  • Human Machine Interface Wearable AR/VR

ICN2

  • NFC wireless IoT sensors
System design
Competences
Systems design KTH

  • Feasibility study, Architecture partition, Design hardware/software, Test and Validation

UCL

  • PCB level integration of ultra low power systems : sensors, energy harvesting, analog and digital signal processing, RF chips, passive RFID tags, antennas

IUNET

  • University of Modena and Reggio Emilia
    • Circuit design
    • Architecture design
    • Electrical testing
  • University of Bologna
    • Design of sensor systems for structural health monitoring applications
    • Interfacing piezoelectric transducers and accelerometers
    • Design of low-power and high performance computing systems
    • End-to-end deployment and optimization of machine learning applications on embedded computing systems
    • Compilers and programming models for embedded and high-performance computing systems
  • University of Calabria
    • Circuit design
    • Architecture design
    • Electrical testing
  • University of Ferrara
    • Solid State Drives
    • FPGA with emerging non-volatile memories
  • Politecnico of Milano
    • MEMS systems (sensors + integrated or discrete electronics for specific final applications)
  • University of Padova
    • AC/DC, DC/DC, DC/AC power conversion design from few watts up to tens of kWatts
    • Design of fully integrated low power radio transceivers for Internet of Things (IoT) applications. Design of fully integrated high resolution radar transceivers.

UAB

  • Device compact modeling for Reliability-Aware Design of ICs.

Uppsala University

  • Tactile neuromorphic circuitry
  • Biomedical systems

VTT

  • Sensor systems and networks, RF and communication systems

VIK-ETT

  • Circuit design, module design, thermomechanical simulations, design validation, quality, reliability