Warsaw University of Technology / Cezamat
Contact persons:
Romuald Beck
Warsaw University of Technology
Pl. Politechniki 1,
00-661 Warsaw,
Poland
Processing platform
- CR facility with cleanliness level 1000/100
- Thermal processes: oxidation (dry and wet SiO2), diffusion (B, P), annealing (PMA)/ high temperature recrystallization
- PECVD Oxford Instruments (fabrication of SiOx, SiNx, SiOxNy, a-Si)
- RIE Oxford Instruments (etching od dielectric/conductive materials in fluorine, as well as chlorine-based RF plasma)
- Reactive magnetron sputtering (Oxford Instruments); fabrication of dielectric materials (HfOx, HfOxNy, AlN, AlOx, TiOx), conductive (Al, Ti, TiN) and amorphous semiconductor (IGZO)
- PVD – e-gun 6kW (Mo, Pt, W, Ti, Ni,…)
- Photolithography SUSS MJB4 (UV, 1 µm feature size)
- Batch spray chemical cleaning/etching SICONNEX (Piranha, SC1, SC2, HF, BHF, metals etching, dielectrics etching, …)
- Thermal processes: dry and wet (HYDROX) oxidation, diffusion (B), high temperature annealing
- LPCVD Si3N4 and poly-Si deposition
- RIE/ICP plasma etching in chlorine containing plasmas Oxford Instruments (RF and ICP plasma source; -30°C to 80°C temperature control; in-situ interferometric etching monitoring)
- Photolithography EVG 6200 (UV, 0,8 µm feature size, front side and back side alignment)
- Wafer bonding EVG 510/200 (adhesive, eutectic, glass frit, direct bonding)
- Ion implantation FLEXion 200-IBS ( 5keV-200keV, 1 AMU-210 AMU, 0°-60° tilt angle; substrate temperature control 100°C-500°C)
- E-beam writer JEOL 9300 (50kV and 100kV, CD<20nm, writing field w/stitching 1mm x 1mm)
Modelling platform
Characterization platform
- Advanced electrical characterization….
- Modern SUSS MicroTec PM8 probe station for the measurement of very low currents in a wide range of temperatures
- Keithley 4200-SCS Semiconductor Characterization System comprising:
- SMUs for the measurement of static and quasi-static I-V charracteristics,
- Low-noise preamplifers ensuring the accuracy of current measurement below 1 pA.
- Small-signal module for admittance measurements in the 1kHz-10MHz range,
- Ultrafast pulse modules for charge-pumping and charge-trapping characterization.
- LCR HP 4285A precision meter for admittance measurements in the 75kHz – 30MHz range
- A set of Keithley SMUs 236, 237 and 238 for static I-V measurements in a wide range of currents (up to 1 A) and voltages (up to 1000 V)
- Keysight B1500 Device Analyzer for static (I-V) and small-signal (C-G-U) measurements
- Spectroscopic ellipsometry UVISEL (190 – 850 nm, automatic goniometry)
- ·Spectroscopic ellipsometry UVISEL2 (190-2000 nm, 2D mapping, automatic goniometry, stage movements 200mm x 200mm)
- AFM
- HRSEM ZEISS Auriga (SE and BSE observations, 0,01kV – 30kV; resolutions: 2,0 nm @ 1kV, 1,0 nm @ >15kV; stage movements 0-110mm x 0-110mm; tilt angle: -5° to +60°, rotation: 360°)
- HRTEM
- FTIR
- Confocal microscopy
- Profilometry