Research Center Juelich

Contact person:

Qing-Tai Zhao

FZJ: Research Center Juelich

Forschungszentrum Jülich GmbH
52425 Jülich
Germany

Equipment / Facilities

Processing platform

Micro/nanoelectronics clean room facility for CMOS/MEMS, III-V.
CMOS processing down to 10nm (EBL)
ALD/AVD for 300mm wafer (Al2O3, HfO2 based dielectric/ferroelectric, TiN, TaN)
CVD for 200mm wafer (Si-Ge-Sn)
Ion implantation: 0.2keV-250keV (up to 300mm wafer)
RTP (up to 300mm wafer)
Sputtering
….

Modelling platform

Characterization platform

Material characterization:
RBS/channeling, SIMS, XPS, XRD, high resolution TEM, AFM, APT, …
Device characterization:
I-V, C-V,P-V, cryo-measurements, Hall setup (till to 15K), pulse measurements

Expertise

		Main Expertises
Beyond CMOS	Neuromorphic Computing	• Synapse and neuron devices • Memristor devices and their integration with CMOS
	Phonon engineering	x
	Small slope switches-NW/TFET/NEMS	• NW transistors • TFETs
	Alternative materials-2D layers	x
	Novel devices for ultra-low power	• Nanowire FETs based on high mobility materials
	1D	x
	Quantum Technologies & Very low temperature electronics	• Cryogenic CMOS • Toplogical insulators for quantum computing • Superconducting quantum computing
More Moore	Logic Nanodevices& circuits	x
	Memories	• Ferroelectric devices
	Very low power devices	x
	High temperature electronics	x
More than Moore	micro-nano-bio Sensors & Systems	x
	Energy Harvesting	x
	RF devices & circuits	x
	Photonics devices	• GeSn photonics
	Power devices	• SiC power devices
	Flexible electronics	x
Smart systems& Systems design	Smart systems	x
Smart systems& Systems design	Systems design	x

Research interests

		Research interests
Beyond CMOS	Neuromorphic Computing	• FeFETs, ferroelectric tunneling diodes, synapses and neuron devices for neuromorphic computing. • Memristor devices with resistive switching materials and phase change materials and their integration with CMOS (1T1R and 1TnR).
	Phonon engineering	x
	Small slope switches-NW/TFET/NEMS	• Gate all around FETs with both horizontal and vertical nanowires. • Vertical SiGeSn/GeSn heterostructure FETs (both MOSFET and TFET). • Nanowire TFETs
	Alternative materials-2D layers	x
	Novel devices for ultra-low power	• High mobility GeSn based CMOS
	1D	x
	Quantum Technologies & Very low temperature electronics	• Cryogenic CMOS for quantum computing application • Toplogical insulator materials growth and characterization. • Quantum computing with toplogical insulators and superconductors • Cryogenic characterization
More Moore	Logic Nanodevices& circuits	x
	Memories	• FeFETs
	Very low power devices	x
	High temperature electronics	x
More than Moore	micro-nano-bio Sensors & Systems	x
	Energy Harvesting	x
	RF devices & circuits	x
	Photonics devices	• SiGeSn growth and characterization • Direct bandgap GeSn photonics
	Power devices	• SiC power MOSFETs
	Flexible electronics	x
Smart systems& Systems design	Smart systems	x
Smart systems& Systems design	Systems design	x

Research Center Juelich

Research Center Juelich

SiNANO Institute