Research Center Juelich
Contact person:
Qing-Tai Zhao
FZJ: Research Center Juelich
Forschungszentrum Jülich GmbH
52425 Jülich
Germany
Equipment / Facilities
Processing platform
- Micro/nanoelectronics clean room facility for CMOS/MEMS, III-V.
- CMOS processing down to 10nm (EBL)
- ALD/AVD for 300mm wafer (Al2O3, HfO2 based dielectric/ferroelectric, TiN, TaN)
- CVD for 200mm wafer (Si-Ge-Sn)
- Ion implantation: 0.2keV-250keV (up to 300mm wafer)
- RTP (up to 300mm wafer)
- Sputtering
- ….
Modelling platform
Characterization platform
Material characterization:
RBS/channeling, SIMS, XPS, XRD, high resolution TEM, AFM, APT, …
Device characterization:
I-V, C-V,P-V, cryo-measurements, Hall setup (till to 15K), pulse measurements
Expertise
| Main Expertises | ||
|---|---|---|
| Beyond CMOS | Neuromorphic Computing | • Synapse and neuron devices • Memristor devices and their integration with CMOS |
| Phonon engineering | x | |
| Small slope switches-NW/TFET/NEMS | • NW transistors • TFETs |
|
| Alternative materials-2D layers | x | |
| Novel devices for ultra-low power | • Nanowire FETs based on high mobility materials | |
| 1D | x | |
| Quantum Technologies & Very low temperature electronics | • Cryogenic CMOS • Toplogical insulators for quantum computing • Superconducting quantum computing |
|
| More Moore | Logic Nanodevices& circuits | x |
| Memories | • Ferroelectric devices | |
| Very low power devices | x | |
| High temperature electronics | x | |
| More than Moore | micro-nano-bio Sensors & Systems | x |
| Energy Harvesting | x | |
| RF devices & circuits | x | |
| Photonics devices | • GeSn photonics | |
| Power devices | • SiC power devices | |
| Flexible electronics | x | |
| Smart systems& Systems design | Smart systems | x |
| Systems design | x |
Research interests
| Research interests | ||
|---|---|---|
| Beyond CMOS | Neuromorphic Computing | • FeFETs, ferroelectric tunneling diodes, synapses and neuron devices for neuromorphic computing. • Memristor devices with resistive switching materials and phase change materials and their integration with CMOS (1T1R and 1TnR). |
| Phonon engineering | x | |
| Small slope switches-NW/TFET/NEMS | • Gate all around FETs with both horizontal and vertical nanowires. • Vertical SiGeSn/GeSn heterostructure FETs (both MOSFET and TFET). • Nanowire TFETs |
|
| Alternative materials-2D layers | x | |
| Novel devices for ultra-low power | • High mobility GeSn based CMOS | |
| 1D | x | |
| Quantum Technologies & Very low temperature electronics | • Cryogenic CMOS for quantum computing application • Toplogical insulator materials growth and characterization. • Quantum computing with toplogical insulators and superconductors • Cryogenic characterization |
|
| More Moore | Logic Nanodevices& circuits | x |
| Memories | • FeFETs | |
| Very low power devices | x | |
| High temperature electronics | x | |
| More than Moore | micro-nano-bio Sensors & Systems | x |
| Energy Harvesting | x | |
| RF devices & circuits | x | |
| Photonics devices | • SiGeSn growth and characterization • Direct bandgap GeSn photonics |
|
| Power devices | • SiC power MOSFETs | |
| Flexible electronics | x | |
| Smart systems& Systems design | Smart systems | x |
| Systems design | x |
Minatec – CROMA