ENSICAEN – National Graduate School of Engineering of Caen
Contact persons:
Bogdan Cretu
ENSICAEN, 6, boulevard Maréchal Juin
CS 45053 – 14050 Caen cedex 4
Processing platform
- Pulsed Laser Deposition (PLD), Sputtering, Ion Beam Deposition (IBD), Ion Beam Etching (IBE), Reactive Ion Etching (RIE), UV Lithography
- Clean room ISO6
- Atomic Force Microscopy (AFM), mechanical profilometer; digital holographic microscope
Modelling platform
Characterization platform
- Lakeshore TTP4 prober (10K – 475K) (on wafer (2inch) measurements at variable temperature)
- Lakeshore TTP4 prober (10K – 475K) – on wafer (1 inch) measurements at variable temperature and under magnetic field
- HP4156B semiconductor parameter analyser
- HP3562A spectral analyzer
- Noise home-made set-up’s, NOISYS.7 low frequency noise system.
- Pulsed measurements, R(T) measurements and Raman Spectroscopy
- Deep Level Transient Spectroscopy DLTS
- Local probe microscopy (AFM, KPFM, PFM, MFM), magneto-optical Kerr (MOKE), Digital Holographic Microscope (DHM), Optical Beam Induced Resistance Change (OBIRCH) analysis (PHEMOS-1000).
- Magnetic shielded room;
- Dedicated characterisation set-up for sensors (magnetic, radiation, electrical, gas sensors)