Training

More Moore-Logic

Basic principles, Modeling, Simulation, IC design, Technological process, Characterization, Reliability, …of:

CMOS bulk

Examples of available “Lectures” or “Practical Work” in the CMOS Bulk domain:

Basic principles
1- Properties of digital circuits
2- Basic principles of bulk CMOS
3- Fundamentals and operating principles
4- The MOS Transistor: Structure, Current-voltage model
5- Combinational circuits: Implementation & device sizing, Power consumption, delays and other issues
6- Clocked circuits, Dynamic logic
7- -Ultra-low-voltage (ULV) IC/SoC
8- Scaling
9- Strain, Orientation and material Engineering

Modeling
1- Variability in CMOS
2- Low frequency noise modeling in semiconductors
3- Compact modeling of low-frequency noise
4- Compact modeling of bulk CMOS
5- TCAD modeling
6- Semiclassical transport Modeling
7- Quantum transport modeling
8- Analytical models
9- Performance of ULV logic (speed/energy/leakage/robustness)

Simulation
1- TCAD simulation
2- Simulation with Monte Carlo methods
3- Simulation with quantum transport methods
4- Mixed device-circuit simulation
5- Mobility calculations with Kubo-Greenwood method
6- Variability in CMOS

IC Design
1- Variability in Logic Circuits
2- ASIC design flow
3- Digital system architecture
4- Simple circuit blocks for telecom applications
5- Ultralow-power analog design
6- Design of ULV logic
7- Design of ULV SoCs

Technological Process
1- Introduction to CMOS process and layout

Characterization
1- Low frequency noise characterization
2- Electrical characterization methods: I-V, split-CV
3- DC and AC Parameter extraction techniques
4- Reliability characterization, Charge pumping
5- Benchmarking device performance
6- Transport (mobility, velocity etc.)
7- Two port AC small signal up to 20 GHz

Reliability
1- Latch-up
2- Hot Carriers in MOSFETs
3- Ultra thin dielectrics/BTI

CMOS SOI

Examples of available “Lectures” or “Practical Work” in the CMOS SOI domain:

Basic principles
1- Fundamentals and operating principles
2- Scaling
3- Strain, Orientation and material Engineering
4- Basic principles of SOI CMOS
5- Performance assesment of FD SOI vs. Bulk for low-power logic

Modeling
1- Variability in CMOS
2- TCAD modeling
3- Semiclassical transport Modeling
4- Quantum transport modeling
5- Analytical models
6- Compact modeling of Fully-Depleted SOI CMOS
7- Compact Modeling of Partially-Depleted SOI CMOS
8- Compact modeling of low-frequency noise

IC Design
1- Variability in Logic Circuits
2- Simple circuit blocks for telecom applications
3- Ultralow-power analog design

Characterization
1- Parameter extraction for Fully-Depleted SOI CMOS
2- DC and AC Parameter extraction techniques
3- Reliability characterization
4- Benchmarking device performance
5- Transport (mobility, velocity etc.)
6- Two port AC small signal up to 20 GHz
7- Wide frequency band characterization of UTBB SOI MOSFETs

Reliability
1- Hot Carriers in MOSFETs
2- Ultra thin dielectrics/BTI
3- Assessment of advanced SOI CMOS technologies for high temperature applications

Multigate Devices

Examples of available “Lectures” or “Practical Work” in the Multigate Devices domain:

Basic principles
1- Fundamentals and operating principles
2- Scaling
3- Strain, Orientation and material Engineering
4- Basic principles of Multigate CMOS

Modeling
1- Variability in CMOS
2- I-V characteristics of DG MOSFETs
3- Compact modeling of Multigate CMOS
4- Compact modeling of low-frequency noise
5- TCAD modeling
6- Semiclassical transport Modeling
7- Quantum transport modeling
8- Analytical models

IC Design
1- Variability in Logic Circuits
2- Simple circuit blocks for telecom applications

Characterization
1- Parameter extraction for Multigate CMOS
2- DC and AC Parameter extraction techniques
3- Reliability characterization
4- Benchmarking device performance
5- Transport (mobility, velocity etc.)
6- Two port AC small signal up to 20 GHz
7- Wide frequency band characterization of MuGFETs
8- Specific features of MuGFETs electrical characterization

Reliability
1- Hot Carriers in MOSFETs
2- Ultra thin dielectrics/BTI
3- Radiation effects in multiple-gate devices

Interconnects

Examples of available “Lectures” or “Practical Work” in the Interconnects domain:

Basic principles
1- Fundamentals
2- Scaling

Other …

Examples of available “Lectures” or “Practical Work” in other More Moore domain:

Basic principles
1- BJT fundamentals and operating principles

Modeling
1- BJT Modeling

Simulation
1- BJT simulation with Monte Carlo techniques

Reliability
1- Hot carrier reliability in BJTs

More Moore-Memory

Basic principles, Modeling, Simulation, IC design, Technological process, Characterization, Reliability, …of:

DRAM

Examples of available “Lectures” or “Practical Work” in the DRAM domain:

Basic principles

1- Floating Body Memories
2- Fundamentals and operating principles

SRAM

Examples of available “Lectures” or “Practical Work” in the SRAM domain:

Basic principles

1- Fundamentals and operating principles

Flash

Examples of available “Lectures” or “Practical Work” in the Flash domain:

Basic principles

1- Fundamentals and operating principles
2- NOR and NAND architectures and array operation
3- Scaling and benchmarking

Modeling

1- Material characteristics and device operation
2- Reliability
3- Statistical modeling
4- Compact modeling

Simulation

1- Cell operation (R/W/E)
2- Reliability
3- Statistical variability

Technological Process

1- High-k dielectrics for flash memories

Characterization

1- Cell operation (R/W/E)
2- Array operation and statistics
3- Reliability

Reliability

1- Cell-level reliability (endurance, retention,…)
2- Array-level reliability (disturbs, variability,)…
3- Few-electron phenomena (random telegraph noise, charge detrapping after cycling,…)
4- Development of extrapolation models

PCM

Examples of available “Lectures” or “Practical Work” in the PCM domain:

Basic principles

1- Fundamentals and operating principles
2- Materials and device architectures
3- Scaling and benchmarking with FG cells

Modeling

1- Material characteristics and device operation
2- Reliability
3- Statistical modeling
4- Compact modeling

Simulation

1- Electrical transport in the amorphous phase
2- Threshold/memory switching
3- Reliability (crystallization, drift, disturbs)

Characterization

1- Cell operation (R/W/E)
2- Array operation and statistics
3- Reliability

Reliability

1- Cell-level reliability (endurance, retention,…)
2- Array-level reliability (disturbs, variability)
3- Drift, 1/f noise, RTN
4- Development of extrapolation models

Other

1- Material/stack engineering for high temperature stability, low power and RAM applications

RRAM

Examples of available “Lectures” or “Practical Work” in the RRAM domain:

Basic principles

1- Fundamentals and operating principles
2- Unipolar and bipolar switching devices and materials
3- Scaling and benchmarking with FG cells

Modeling

1- Material characteristics and device operation
2- Reliability
3- Statistical modeling
4- Compact modeling

Simulation

1- Set/reset operations
2- Reliability (noise, retention, disturbs)
3- Statistical variability

Characterization

1- Cell operation (R/W/E)
2- Array operation and statistics
3- Reliability
4- DC and pulsed characteristics

Reliability

1- Cell-level reliability (endurance, retention,…)
2- Array-level reliability (disturbs, variability)
3- RTN, Drift
4- Development of extrapolation models

Other

1- Selector materials and devices
2- Computing applications

MRAM

More than Moore

Basic principles, Modeling, Simulation, IC design, Technological process, Characterization, Reliability, …of:

Sensors/Actuators

Examples of available “Lectures” or “Practical Work” in the Sensors/Actuators domains:

Basic principles

1- Graphene NEMS
2- MEMS / NEMS
3- Nanowire, nanopore and nanoelectrode based sensors
4- Ultra low-power temperature, RH, strain gauges, pressure, flow…
5- Harsh-environment sensors and electronics (high temperature, radiations)
6- Radiation detectors
7- Thin SOI MEMS sensors
8- On-chip MEMS-based tensile testing to explore the properties of materials at nanometer scale

Modeling

1- TCAD modeling
2- Poisson-Boltzmann modeling of electrode/electrolyte interfaces
3- Brownian dynamics

Simulation

1- Techonogical & Electromechanical simulation (Silvaco / ANSYS / FEMLAB)
2- Nanoelectrode based capacitive biosensor simulation in 1, 2 and 3D
3- Ion channel simulation
4- Gas sensors and impedance sensor simulation

IC Design

1- Readout interfaces
2- SOI CMOS analog ULP / harsh-environment circuits

Technological Process

1- Graphene NEMS
2- Surface & volume micromachined MEMS
3- Si processes for sensor fabrication (Micromachining processes, electrochemical processes)
4- Plasma etching

Characterization

1- Characterization of Pressure Sensors
2- SOI harsh-environment components (Sensors, electronics)

Energy Harvesting

Examples of available “Lectures” or “Practical Work” in the Energy Harvesting domain:

Basic principles

1- Fundamentals and device operation
2- Fundamentals a of solar cells
3- Overview of solar cell technologies
4- PV on SOI CMOS
5- Basic structure of solar cells
6- Limitations/improvements of solar cells
7- Cell properties & design
8- Harvesting
9- Storage

Modeling

1- Modeling solar cells

Simulation

1- PiezoNEMS
2- Simulation of solar cells

IC Design

1- Harvesting circuits for photovoltaic
2- Piezo and thermoelectric generators
3- ULP power management

Characterization

1- AFM characterization of PiezoNEMS
2- Extraction of electro(mechanical) properties of silicon nanowires under large strain

Reliability

1- MEMS reliability characterization

RF devices & circuits

Examples of available “Lectures” or “Practical Work” in the RF domain:

Basic principles

1- Principles of RF operation in solid-state devices and circuits
2- Fundamentals and device operation
3- III-V devices for RF applications
4- Antennas basics
5- Transmitter architecture, digital modulations
6- S parameters, impedance matching
7- Microwave amplifier design
8- HEMT – HBT
9- SOI CMOS Analog/RF device behaviors and performance
10- High-resistivity Si and SOI substrates for RF applications

Modeling

1- Compact RF Modeling of nanoscale MOSFETs
2- Compact RF noise modeling in nanoscale MOSFETs
3- TCAD modeling
4- Monte Carlo
5- SOI CMOS Analog/RF device models

Simulation

1- Introduction to CAD for RF circuits (ADS simulator)
2- TCAD simulation

IC Design

1- Principle
2- LNA
3- Oscillator
4- RF CMOS design
5- Circuits and systems for telecom applications
6- SOI CMOS Analog/RF circuits

Technological Process

1- Fabrication principle
2- HEMT technology
3- MEMS

Characterization

1- MEMS characterization
2- Characterization of thin films
3- S-parameter
4- RF characterization technique
5- RF MOS parameter extraction
6- Two port AC small signal up to 20GHz
7- Time domain reflectometry
8- DC performance and Reliability of III-V devices
9- SOI CMOS Analog/RF device behaviors and performance
10- Wideband electrical characterization of SOI MOS transistors
11- Wideband electrical characterization of multigate transistors

Power devices & circuits

Examples of available “Lectures” or “Practical Work” in the Power domain:

Basic principles

1- Principles of the operation of Power FETs
2- Fundamentals and device operation
3- III-V devices for power applications
4- Basics of power components (bipolar, MOSFETs)
5- Linear vs. switch-mode electronics
6- DC-DC converters

Modeling

1- Compact modeling of Power MOSFETs
2- Compact Modeling of Power HEMTs
3- TCAD modeling
4- Impact ionization

Simulation

1- TCAD simulation

IC Design

1- Dc/dc converters

Characterization

1- DC performance and Reliability of III-V devices

Imagers

Beyond-CMOS

Basic principles, Modeling, Simulation, IC design, Technological process, Characterization, Reliability, …of:

Nanowires

Examples of available “Lectures” or “Practical Work” in the Nanowires domain:

Basic principles

1- Fundamentals and device operation
2- Scaling
3- Benchmarking w.r.t. CMOS and alternative device concepts
4- Introduction to nanomaterials: nanotubes, nanowires…
5- Physics of nanowire MOSFETs

Modeling

1- Analytical and compact modeling
2- Semiclassical transport modeling
3- Quantum mechanical transport modeling
4- TCAD modeling
5- Compact modeling of nanowire MOSFETs
6- Compact modeling of junctionless nanowires
7- RF Compact Modeling of nanowires

Simulation

1- TCAD simulation
2- Monte Carlo simulation of carrier transport
3- Quantum mechanical simulation
4- Mixed device-circuit simulation

Technological Process

1- Fabrication methods of nanostructures

Characterization

1- Nanocharacterization
2- DC
3- RF
4- AFM-STM
5- Basic DC and AC small signal
6- Temperature
7- Noise

Tunnel FETs

Examples of available “Lectures” or “Practical Work” in the Tunnel FETs domain:

Basic principles

1- Physical basics of tunneling
2- Tunnel FETs
3- Physics of Tunnel FETs
4- Fundamentals and device operation
5- Scaling
6- Benchmarking w.r.t. CMOS and alternative device concepts
7- Noise

Modeling

1- Modelling of currents through high-k dielectrics
2- Modelling MOS gate currents through single and double gates
3- MOS tunelling switches
4- Compact modeling of Tunnel FETs
5- Analytical modeling
6- Semiclassical transport modeling
7- Quantum mechanical transport modeling
8- TCAD modeling

Simulation

1- TCAD simulation
2- Monte Carlo simulation of carrier transport
3- Quantum mechanical simulation
4- Mixed device-circuit simulation

Technological Process

1- Fabrication methods of nanostructures

Characterization

1- Nanocharacterization
2- DC
3- RF
4- AFM-STM
5- Basic DC and AC small signal
6- Temperature
7- Noise

Reliability

1- Ultrathin dielectric layers realibility issues

Fe gate FETs

NEMS

Examples of available “Lectures” or “Practical Work” in the NEMS domain:

Basic principles

1- Introduction on MEMS/ BioMEMS
2- Green chemistry /environmental control
3- Basic concepts of microfluidics
4- Basic concepts of micromechanics

Technological Process

1- Microfabrication on plastic materials
2- Generic MEMS technology

Spin Devices

Carbon Electronics

Examples of available “Lectures” or “Practical Work” in the Carbon Electronics domain:

Basic principles

1- Graphene
2- CNTs
3- Carbon based nanomaterials
4- Fundamentals and device operation
5- Scaling
6- Benchmarking w.r.t. CMOS and alternative device concepts

Modeling

1- Analytical and compact modeling
2- Semiclassical transport modeling
3- Quantum mechanical transport modeling

Simulation

1- Multiscale simulation
2- Monte Carlo simulation of carrier transport
3- Quantum mechanical simulation

Technological Process

1- Device Fabrication

Characterization

1- Raman Spectroscopy
2- Device electrical characterization
3- Basic DC and AC small signal
4- Temperature
5- Noise

2D FETs

Examples of available “Lectures” or “Practical Work” in the 2D FETs domain:

Basic principles

1- MoS2

Modeling

1- Analytical and compact modeling
2- Semiclassical transport modeling
3- Quantum mechanical transport modeling

Simulation

1- Multiscale simulation
2- Quantum mechanical simulation

Technological Process

1- Device Fabrication

Characterization

1- Raman Spectroscopy
2- Device electrical characterization
3- Basic DC and AC small signal
4- Temperature
5- Noise

Other

Examples of available “Lectures” or “Practical Work” in Other Beyond CMOS domain:

Basic principles

1- Moore law
2- New paradigme

Technological Process

1- Silicon nanocrystals for electronic and photonic applications

Novel Materials

Basic principles, Modeling, Simulation, Technological process, Characterization, Reliability, … of:

High K/Low K

Examples of available “Lectures” or “Practical Work” in the High K/Low K domain:

Basic principles

1- Fundamentals
2- Physics of the gate tunneling current and noise in nanoscale MOSFETs

Modeling

1- Modelling of currents through high-k dielectrics
2- Compact Modeling of the gate tunneling current in nanoscale MOSFETs
3- Compact Modeling of the gate tunneling noise in nanoscale MOSFETs
4- Modeling of High-k related scattering mechanisms
5- Electrostatics of MOS stacks with multilayer dielectrics

Simulation

1- MOS device CV characteristics
2- MOS transistor simulation (with different modeling approaches)

Technological Process

1- High-k dielectrics for memory applications
2- Gate dielectric materials for TFT structures
3- ZnO-based amorphous semiconductors for application in TFT structures

Characterization

1- Electrical characterisation of gate stacks including high-k dielectrics
2- Gate tunneling current parameter extraction
3- AC small signal MOS CV characteristics

Strain Layers

Examples of available “Lectures” or “Practical Work” in the Strain Layers domain:

Basic principles

1- Fundamentals

Modeling

1- Band structure and transport modeling (TB, KP, EMA)
2- Semiclassical transport modeling
3- Quantum transport modeling
4- TCAD mobility modeling

Simulation

1- Monte Carlo device simulation
2- Full quantum transport simulation

Substrate/Channel Orientation

Examples of available “Lectures” or “Practical Work” in the Substrate/Channel Orientation domain:

Basic principles

1- Fundamentals

Modeling

1- Band structure and transport modeling (TB, KP, EMA)
2- Semiclassical transport modeling
3- Quantum transport modeling
4- TCAD mobility modeling

Simulation

1- Monte Carlo device simulation
2- Full quantum transport simulation

Alternative Channels (Ge, III-V,...)

Examples of available “Lectures” or “Practical Work” in the Alternative Channels domain:

Basic principles

1- Fundamentals
2- III-V materials
3- HEMT- HBT
4- Si-Ge- Sn for electronics and optoelectronics
5- Physics of III-V FETs

Modeling

1- On state performance
2- Off state leakage
3- Quantum effects
4- Short Channel Effects
5- Compact Modeling of III-V FETs
6- Compact Modeling of GaN HEMTs
7- Band structure and transport modeling (TB, KP, EMA)
8- Semiclassical transport modeling
9- Quantum transport modeling
10- TCAD mobility modeling

Simulation

1- Monte Carlo device simulation
2- Full quantum transport simulation

Technological Process

1- III-V technology
2- III-V FET fabrication

Characterization

1- Electrical characterization of Ge channel MOSFETs
2- Electrical characterization of GaN MOSFETs
3- DC and AC small signal, transient

2D Layers (Graphene, Silicene,...)

Examples of available “Lectures” or “Practical Work” in the 2D Layers domain:

Basic principles

1- Fundamentals
2- Electrical properties
3- Exploration of materials space
4- Graphene
5- MoS2

Modeling

1- Band structure and transport modeling (TB, KP)
2- Semiclassical transport modeling
3- Quantum transport modeling
4- Ab iniitio modeling

Simulation

1- Monte Carlo device simulation
2- Full quantum transport simulation
3- Multiscale simulations
4- Graphene-based photodetectors

Technological Process

1- Graphene fabrication

Characterization

1- Raman
2- SEM/FIB

SOI

Examples of available “Lectures” or “Practical Work” in the SOI domain:

Basic principles

1- Fundamentals
2- High-resistivity Si and SOI substrates for RF applications

Modeling

1- Band structure and transport modeling (TB, KP)
2- Semiclassical transport modeling
3- Quantum transport modeling
4- Compact Modeling of Fully-Depleted SOI MOSFETs

Simulation

1- Monte Carlo device simulation
2- Full quantum transport simulation

Characterization

1- Charge pumping in SOI
2- Electrical characterization and parameter extraction of SOI
3- Parameter extraction for Fully-Depleted SOI MOSFETs
4- DC and AC small signal, transient
5- Wideband electrical characterization of SOI substrates

Metals/Silicides

Examples of available “Lectures” or “Practical Work” in the Metals/Silicides domain:

Basic principles

1- Fundamentals of contacts
2- Silicides on SiGe

Modeling

1- Schottky barrier (semiclassical)

Magnetic Materials

Examples of available “Lectures” or “Practical Work” in the Magnetic materials domain:

Basic principles

1- Ferroelectric materials
2- Ferromagnetic materials

The number of hours is flexible.

Other courses in other areas are available on request. Do not hesitate to contact us.

Contact

SiNANO Institute