Basic principles, Modeling, Simulation, IC design, Technological process, Characterization, Reliability, …of:
CMOS bulk
Examples of available “Lectures” or “Practical Work” in the CMOS Bulk domain:
Basic principles
1- Properties of digital circuits
2- Basic principles of bulk CMOS
3- Fundamentals and operating principles
4- The MOS Transistor: Structure, Current-voltage model
5- Combinational circuits: Implementation & device sizing, Power consumption, delays and other issues
6- Clocked circuits, Dynamic logic
7- -Ultra-low-voltage (ULV) IC/SoC
8- Scaling
9- Strain, Orientation and material Engineering
Modeling
1- Variability in CMOS
2- Low frequency noise modeling in semiconductors
3- Compact modeling of low-frequency noise
4- Compact modeling of bulk CMOS
5- TCAD modeling
6- Semiclassical transport Modeling
7- Quantum transport modeling
8- Analytical models
9- Performance of ULV logic (speed/energy/leakage/robustness)
Simulation
1- TCAD simulation
2- Simulation with Monte Carlo methods
3- Simulation with quantum transport methods
4- Mixed device-circuit simulation
5- Mobility calculations with Kubo-Greenwood method
6- Variability in CMOS
IC Design
1- Variability in Logic Circuits
2- ASIC design flow
3- Digital system architecture
4- Simple circuit blocks for telecom applications
5- Ultralow-power analog design
6- Design of ULV logic
7- Design of ULV SoCs
Technological Process
1- Introduction to CMOS process and layout
Characterization
1- Low frequency noise characterization
2- Electrical characterization methods: I-V, split-CV
3- DC and AC Parameter extraction techniques
4- Reliability characterization, Charge pumping
5- Benchmarking device performance
6- Transport (mobility, velocity etc.)
7- Two port AC small signal up to 20 GHz
Reliability
1- Latch-up
2- Hot Carriers in MOSFETs
3- Ultra thin dielectrics/BTI
CMOS SOI
Examples of available “Lectures” or “Practical Work” in the CMOS SOI domain:
Basic principles
1- Fundamentals and operating principles
2- Scaling
3- Strain, Orientation and material Engineering
4- Basic principles of SOI CMOS
5- Performance assesment of FD SOI vs. Bulk for low-power logic
Modeling
1- Variability in CMOS
2- TCAD modeling
3- Semiclassical transport Modeling
4- Quantum transport modeling
5- Analytical models
6- Compact modeling of Fully-Depleted SOI CMOS
7- Compact Modeling of Partially-Depleted SOI CMOS
8- Compact modeling of low-frequency noise
Simulation
1- TCAD simulation
2- Simulation with Monte Carlo methods
3- Simulation with quantum transport methods
4- Mixed device-circuit simulation
5- Mobility calculations with Kubo-Greenwood method
6- Variability in CMOS
IC Design
1- Variability in Logic Circuits
2- Simple circuit blocks for telecom applications
3- Ultralow-power analog design
Characterization
1- Parameter extraction for Fully-Depleted SOI CMOS
2- DC and AC Parameter extraction techniques
3- Reliability characterization
4- Benchmarking device performance
5- Transport (mobility, velocity etc.)
6- Two port AC small signal up to 20 GHz
7- Wide frequency band characterization of UTBB SOI MOSFETs
Reliability
1- Hot Carriers in MOSFETs
2- Ultra thin dielectrics/BTI
3- Assessment of advanced SOI CMOS technologies for high temperature applications
Multigate Devices
Examples of available “Lectures” or “Practical Work” in the Multigate Devices domain:
Basic principles
1- Fundamentals and operating principles
2- Scaling
3- Strain, Orientation and material Engineering
4- Basic principles of Multigate CMOS
Modeling
1- Variability in CMOS
2- I-V characteristics of DG MOSFETs
3- Compact modeling of Multigate CMOS
4- Compact modeling of low-frequency noise
5- TCAD modeling
6- Semiclassical transport Modeling
7- Quantum transport modeling
8- Analytical models
Simulation
1- TCAD simulation
2- Simulation with Monte Carlo methods
3- Simulation with quantum transport methods
4- Mixed device-circuit simulation
5- Mobility calculations with Kubo-Greenwood method
6- Variability in CMOS
IC Design
1- Variability in Logic Circuits
2- Simple circuit blocks for telecom applications
Characterization
1- Parameter extraction for Multigate CMOS
2- DC and AC Parameter extraction techniques
3- Reliability characterization
4- Benchmarking device performance
5- Transport (mobility, velocity etc.)
6- Two port AC small signal up to 20 GHz
7- Wide frequency band characterization of MuGFETs
8- Specific features of MuGFETs electrical characterization
Reliability
1- Hot Carriers in MOSFETs
2- Ultra thin dielectrics/BTI
3- Radiation effects in multiple-gate devices
Interconnects
Examples of available “Lectures” or “Practical Work” in the Interconnects domain:
Basic principles
1- Fundamentals
2- Scaling
Other …
Examples of available “Lectures” or “Practical Work” in other More Moore domain:
Basic principles
1- BJT fundamentals and operating principles
Modeling
1- BJT Modeling
Simulation
1- BJT simulation with Monte Carlo techniques
Reliability
1- Hot carrier reliability in BJTs
Basic principles, Modeling, Simulation, IC design, Technological process, Characterization, Reliability, …of:
DRAM
Examples of available “Lectures” or “Practical Work” in the DRAM domain:
- Basic principles
1- Floating Body Memories
2- Fundamentals and operating principles
SRAM
Examples of available “Lectures” or “Practical Work” in the SRAM domain:
- Basic principles
1- Fundamentals and operating principles
Flash
Examples of available “Lectures” or “Practical Work” in the Flash domain:
- Basic principles
1- Fundamentals and operating principles
2- NOR and NAND architectures and array operation
3- Scaling and benchmarking
- Modeling
1- Material characteristics and device operation
2- Reliability
3- Statistical modeling
4- Compact modeling
- Simulation
1- Cell operation (R/W/E)
2- Reliability
3- Statistical variability
- Technological Process
1- High-k dielectrics for flash memories
- Characterization
1- Cell operation (R/W/E)
2- Array operation and statistics
3- Reliability
- Reliability
1- Cell-level reliability (endurance, retention,…)
2- Array-level reliability (disturbs, variability,)…
3- Few-electron phenomena (random telegraph noise, charge detrapping after cycling,…)
4- Development of extrapolation models
PCM
Examples of available “Lectures” or “Practical Work” in the PCM domain:
- Basic principles
1- Fundamentals and operating principles
2- Materials and device architectures
3- Scaling and benchmarking with FG cells
- Modeling
1- Material characteristics and device operation
2- Reliability
3- Statistical modeling
4- Compact modeling
- Simulation
1- Electrical transport in the amorphous phase
2- Threshold/memory switching
3- Reliability (crystallization, drift, disturbs)
- Characterization
1- Cell operation (R/W/E)
2- Array operation and statistics
3- Reliability
- Reliability
1- Cell-level reliability (endurance, retention,…)
2- Array-level reliability (disturbs, variability)
3- Drift, 1/f noise, RTN
4- Development of extrapolation models
- Other
1- Material/stack engineering for high temperature stability, low power and RAM applications
RRAM
Examples of available “Lectures” or “Practical Work” in the RRAM domain:
- Basic principles
1- Fundamentals and operating principles
2- Unipolar and bipolar switching devices and materials
3- Scaling and benchmarking with FG cells
- Modeling
1- Material characteristics and device operation
2- Reliability
3- Statistical modeling
4- Compact modeling
- Simulation
1- Set/reset operations
2- Reliability (noise, retention, disturbs)
3- Statistical variability
- Characterization
1- Cell operation (R/W/E)
2- Array operation and statistics
3- Reliability
4- DC and pulsed characteristics
- Reliability
1- Cell-level reliability (endurance, retention,…)
2- Array-level reliability (disturbs, variability)
3- RTN, Drift
4- Development of extrapolation models
- Other
1- Selector materials and devices
2- Computing applications
MRAM
Basic principles, Modeling, Simulation, IC design, Technological process, Characterization, Reliability, …of:
Sensors/Actuators
Examples of available “Lectures” or “Practical Work” in the Sensors/Actuators domains:
- Basic principles
1- Graphene NEMS
2- MEMS / NEMS
3- Nanowire, nanopore and nanoelectrode based sensors
4- Ultra low-power temperature, RH, strain gauges, pressure, flow…
5- Harsh-environment sensors and electronics (high temperature, radiations)
6- Radiation detectors
7- Thin SOI MEMS sensors
8- On-chip MEMS-based tensile testing to explore the properties of materials at nanometer scale
- Modeling
1- TCAD modeling
2- Poisson-Boltzmann modeling of electrode/electrolyte interfaces
3- Brownian dynamics
- Simulation
1- Techonogical & Electromechanical simulation (Silvaco / ANSYS / FEMLAB)
2- Nanoelectrode based capacitive biosensor simulation in 1, 2 and 3D
3- Ion channel simulation
4- Gas sensors and impedance sensor simulation
- IC Design
1- Readout interfaces
2- SOI CMOS analog ULP / harsh-environment circuits
- Technological Process
1- Graphene NEMS
2- Surface & volume micromachined MEMS
3- Si processes for sensor fabrication (Micromachining processes, electrochemical processes)
4- Plasma etching
- Characterization
1- Characterization of Pressure Sensors
2- SOI harsh-environment components (Sensors, electronics)
Energy Harvesting
Examples of available “Lectures” or “Practical Work” in the Energy Harvesting domain:
- Basic principles
1- Fundamentals and device operation
2- Fundamentals a of solar cells
3- Overview of solar cell technologies
4- PV on SOI CMOS
5- Basic structure of solar cells
6- Limitations/improvements of solar cells
7- Cell properties & design
8- Harvesting
9- Storage
- Modeling
1- Modeling solar cells
- Simulation
1- PiezoNEMS
2- Simulation of solar cells
- IC Design
1- Harvesting circuits for photovoltaic
2- Piezo and thermoelectric generators
3- ULP power management
- Characterization
1- AFM characterization of PiezoNEMS
2- Extraction of electro(mechanical) properties of silicon nanowires under large strain
- Reliability
1- MEMS reliability characterization
RF devices & circuits
Examples of available “Lectures” or “Practical Work” in the RF domain:
- Basic principles
1- Principles of RF operation in solid-state devices and circuits
2- Fundamentals and device operation
3- III-V devices for RF applications
4- Antennas basics
5- Transmitter architecture, digital modulations
6- S parameters, impedance matching
7- Microwave amplifier design
8- HEMT – HBT
9- SOI CMOS Analog/RF device behaviors and performance
10- High-resistivity Si and SOI substrates for RF applications
- Modeling
1- Compact RF Modeling of nanoscale MOSFETs
2- Compact RF noise modeling in nanoscale MOSFETs
3- TCAD modeling
4- Monte Carlo
5- SOI CMOS Analog/RF device models
- Simulation
1- Introduction to CAD for RF circuits (ADS simulator)
2- TCAD simulation
- IC Design
1- Principle
2- LNA
3- Oscillator
4- RF CMOS design
5- Circuits and systems for telecom applications
6- SOI CMOS Analog/RF circuits
- Technological Process
1- Fabrication principle
2- HEMT technology
3- MEMS
- Characterization
1- MEMS characterization
2- Characterization of thin films
3- S-parameter
4- RF characterization technique
5- RF MOS parameter extraction
6- Two port AC small signal up to 20GHz
7- Time domain reflectometry
8- DC performance and Reliability of III-V devices
9- SOI CMOS Analog/RF device behaviors and performance
10- Wideband electrical characterization of SOI MOS transistors
11- Wideband electrical characterization of multigate transistors
Power devices & circuits
Examples of available “Lectures” or “Practical Work” in the Power domain:
- Basic principles
1- Principles of the operation of Power FETs
2- Fundamentals and device operation
3- III-V devices for power applications
4- Basics of power components (bipolar, MOSFETs)
5- Linear vs. switch-mode electronics
6- DC-DC converters
- Modeling
1- Compact modeling of Power MOSFETs
2- Compact Modeling of Power HEMTs
3- TCAD modeling
4- Impact ionization
- Simulation
1- TCAD simulation
- IC Design
1- Dc/dc converters
- Characterization
1- DC performance and Reliability of III-V devices
Imagers
Basic principles, Modeling, Simulation, IC design, Technological process, Characterization, Reliability, …of:
Nanowires
Examples of available “Lectures” or “Practical Work” in the Nanowires domain:
- Basic principles
1- Fundamentals and device operation
2- Scaling
3- Benchmarking w.r.t. CMOS and alternative device concepts
4- Introduction to nanomaterials: nanotubes, nanowires…
5- Physics of nanowire MOSFETs
- Modeling
1- Analytical and compact modeling
2- Semiclassical transport modeling
3- Quantum mechanical transport modeling
4- TCAD modeling
5- Compact modeling of nanowire MOSFETs
6- Compact modeling of junctionless nanowires
7- RF Compact Modeling of nanowires
- Simulation
1- TCAD simulation
2- Monte Carlo simulation of carrier transport
3- Quantum mechanical simulation
4- Mixed device-circuit simulation
- Technological Process
1- Fabrication methods of nanostructures
- Characterization
1- Nanocharacterization
2- DC
3- RF
4- AFM-STM
5- Basic DC and AC small signal
6- Temperature
7- Noise
Tunnel FETs
Examples of available “Lectures” or “Practical Work” in the Tunnel FETs domain:
- Basic principles
1- Physical basics of tunneling
2- Tunnel FETs
3- Physics of Tunnel FETs
4- Fundamentals and device operation
5- Scaling
6- Benchmarking w.r.t. CMOS and alternative device concepts
7- Noise
- Modeling
1- Modelling of currents through high-k dielectrics
2- Modelling MOS gate currents through single and double gates
3- MOS tunelling switches
4- Compact modeling of Tunnel FETs
5- Analytical modeling
6- Semiclassical transport modeling
7- Quantum mechanical transport modeling
8- TCAD modeling
- Simulation
1- TCAD simulation
2- Monte Carlo simulation of carrier transport
3- Quantum mechanical simulation
4- Mixed device-circuit simulation
- Technological Process
1- Fabrication methods of nanostructures
- Characterization
1- Nanocharacterization
2- DC
3- RF
4- AFM-STM
5- Basic DC and AC small signal
6- Temperature
7- Noise
- Reliability
1- Ultrathin dielectric layers realibility issues
Fe gate FETs
NEMS
Examples of available “Lectures” or “Practical Work” in the NEMS domain:
- Basic principles
1- Introduction on MEMS/ BioMEMS
2- Green chemistry /environmental control
3- Basic concepts of microfluidics
4- Basic concepts of micromechanics
- Technological Process
1- Microfabrication on plastic materials
2- Generic MEMS technology
Spin Devices
Carbon Electronics
Examples of available “Lectures” or “Practical Work” in the Carbon Electronics domain:
- Basic principles
1- Graphene
2- CNTs
3- Carbon based nanomaterials
4- Fundamentals and device operation
5- Scaling
6- Benchmarking w.r.t. CMOS and alternative device concepts
- Modeling
1- Analytical and compact modeling
2- Semiclassical transport modeling
3- Quantum mechanical transport modeling
- Simulation
1- Multiscale simulation
2- Monte Carlo simulation of carrier transport
3- Quantum mechanical simulation
- Technological Process
1- Device Fabrication
- Characterization
1- Raman Spectroscopy
2- Device electrical characterization
3- Basic DC and AC small signal
4- Temperature
5- Noise
2D FETs
Examples of available “Lectures” or “Practical Work” in the 2D FETs domain:
- Basic principles
1- MoS2
- Modeling
1- Analytical and compact modeling
2- Semiclassical transport modeling
3- Quantum mechanical transport modeling
- Simulation
1- Multiscale simulation
2- Quantum mechanical simulation
- Technological Process
1- Device Fabrication
- Characterization
1- Raman Spectroscopy
2- Device electrical characterization
3- Basic DC and AC small signal
4- Temperature
5- Noise
Other
Examples of available “Lectures” or “Practical Work” in Other Beyond CMOS domain:
- Basic principles
1- Moore law
2- New paradigme
- Technological Process
1- Silicon nanocrystals for electronic and photonic applications
Basic principles, Modeling, Simulation, Technological process, Characterization, Reliability, … of:
High K/Low K
Examples of available “Lectures” or “Practical Work” in the High K/Low K domain:
- Basic principles
1- Fundamentals
2- Physics of the gate tunneling current and noise in nanoscale MOSFETs
- Modeling
1- Modelling of currents through high-k dielectrics
2- Compact Modeling of the gate tunneling current in nanoscale MOSFETs
3- Compact Modeling of the gate tunneling noise in nanoscale MOSFETs
4- Modeling of High-k related scattering mechanisms
5- Electrostatics of MOS stacks with multilayer dielectrics
- Simulation
1- MOS device CV characteristics
2- MOS transistor simulation (with different modeling approaches)
- Technological Process
1- High-k dielectrics for memory applications
2- Gate dielectric materials for TFT structures
3- ZnO-based amorphous semiconductors for application in TFT structures
- Characterization
1- Electrical characterisation of gate stacks including high-k dielectrics
2- Gate tunneling current parameter extraction
3- AC small signal MOS CV characteristics
Strain Layers
Examples of available “Lectures” or “Practical Work” in the Strain Layers domain:
- Basic principles
1- Fundamentals
- Modeling
1- Band structure and transport modeling (TB, KP, EMA)
2- Semiclassical transport modeling
3- Quantum transport modeling
4- TCAD mobility modeling
- Simulation
1- Monte Carlo device simulation
2- Full quantum transport simulation
Substrate/Channel Orientation
Examples of available “Lectures” or “Practical Work” in the Substrate/Channel Orientation domain:
- Basic principles
1- Fundamentals
- Modeling
1- Band structure and transport modeling (TB, KP, EMA)
2- Semiclassical transport modeling
3- Quantum transport modeling
4- TCAD mobility modeling
- Simulation
1- Monte Carlo device simulation
2- Full quantum transport simulation
Alternative Channels (Ge, III-V,...)
Examples of available “Lectures” or “Practical Work” in the Alternative Channels domain:
- Basic principles
1- Fundamentals
2- III-V materials
3- HEMT- HBT
4- Si-Ge- Sn for electronics and optoelectronics
5- Physics of III-V FETs
- Modeling
1- On state performance
2- Off state leakage
3- Quantum effects
4- Short Channel Effects
5- Compact Modeling of III-V FETs
6- Compact Modeling of GaN HEMTs
7- Band structure and transport modeling (TB, KP, EMA)
8- Semiclassical transport modeling
9- Quantum transport modeling
10- TCAD mobility modeling
- Simulation
1- Monte Carlo device simulation
2- Full quantum transport simulation
- Technological Process
1- III-V technology
2- III-V FET fabrication
- Characterization
1- Electrical characterization of Ge channel MOSFETs
2- Electrical characterization of GaN MOSFETs
3- DC and AC small signal, transient
2D Layers (Graphene, Silicene,...)
Examples of available “Lectures” or “Practical Work” in the 2D Layers domain:
- Basic principles
1- Fundamentals
2- Electrical properties
3- Exploration of materials space
4- Graphene
5- MoS2
- Modeling
1- Band structure and transport modeling (TB, KP)
2- Semiclassical transport modeling
3- Quantum transport modeling
4- Ab iniitio modeling
- Simulation
1- Monte Carlo device simulation
2- Full quantum transport simulation
3- Multiscale simulations
4- Graphene-based photodetectors
- Technological Process
1- Graphene fabrication
- Characterization
1- Raman
2- SEM/FIB
SOI
Examples of available “Lectures” or “Practical Work” in the SOI domain:
- Basic principles
1- Fundamentals
2- High-resistivity Si and SOI substrates for RF applications
- Modeling
1- Band structure and transport modeling (TB, KP)
2- Semiclassical transport modeling
3- Quantum transport modeling
4- Compact Modeling of Fully-Depleted SOI MOSFETs
- Simulation
1- Monte Carlo device simulation
2- Full quantum transport simulation
- Characterization
1- Charge pumping in SOI
2- Electrical characterization and parameter extraction of SOI
3- Parameter extraction for Fully-Depleted SOI MOSFETs
4- DC and AC small signal, transient
5- Wideband electrical characterization of SOI substrates
Metals/Silicides
Examples of available “Lectures” or “Practical Work” in the Metals/Silicides domain:
- Basic principles
1- Fundamentals of contacts
2- Silicides on SiGe
- Modeling
1- Schottky barrier (semiclassical)
Magnetic Materials
Examples of available “Lectures” or “Practical Work” in the Magnetic materials domain:
- Basic principles
1- Ferroelectric materials
2- Ferromagnetic materials
The number of hours is flexible.
Other courses in other areas are available on request. Do not hesitate to contact us.
Minatec – CROMA