Platforms

Characterization Platform

Coordination: Grenoble INP

Contact person: Gérard Ghibaudo, ghibaudo@minatec.inpg.fr

The Joint Characterization Platform has been established to allow access to the characterization facilities to all NANOSIL partners. Access can be made available to external organization.

Example of facilities concern:

Electrical characterization

LF electrical characterization (admittance, CV, IV, 1/f noise) of silicon based materials and devices
Room to low temperature magneto-transport in high magnetic fields (Hall, mobility…°)RF a
nd HF characterization at wafer level up to 110 GHz and down to 30K (S parameters, noise, power)
Transient and fast current measurements, Setup for measurements of ring oscillators
EEPROM memory programming/erasing/retention characterizationDefects and interface quality characterization by C-V, G-w, charge pumping, DLTS, TSC, transient analysis…
Reliability characterization (breakdown, hot carrier stress, BTI, BTS…)
Sub-nm depth profiling for doping/mobility data in Si and strained Si

Optical characterization

Absorption measurements, wavelength range UV-VIS-IR
Photoluminescence (PL) and micro spot Photoluminescence (µPL)
Laser excitation: 325 nm, 457.8nm, 488nm, 514.5nm
Spectrometer: 350nm-1600nm
Electroluminescence (EL): 350nm-1600nm
Photocurrent-photovoltage (UV-VIS)

Physical and structural characterization

Physical characterization of silicon based materials by SIMS, XRD, HRTEM, AFM, HRSEM, ellipsometry, FIB, RBS, channeling, MEIS, ESCA, XRR…
Near field microscopy by AFM (STM, SGM, TUNA, EFM, MFM…)
Sub-nm depth profiling of strain and composition (Si, SiGe)
Nanoscale strain measurements using TERS with complementary finite element modeling
Micro-Raman: Composition and stress determination Simultaneous evaluation of surface roughness, strain and related defects
Real-time monitoring of strain/morphology evolution on a nanoscale during thermal processing
Defect identification: misfit dislocations, stacking faults and threading dislocations
Surface analysis, Line Width Roughness ans critical dimension metrology on patterned surfaces by 3D AFM
MEMSNEMS characterization (vibration, sensitivity, mechanical, thermal…)

The Joint Characterization Platform also assists partners to get access and know-how of specific processes not available at the home institution.

If you want to send a Request Form, Please, CLICK HERE

Processing Platform

Coordination: KBH

Contact person: Per-Erik Hellström, pereh@kth.se

The Joint Processing Platform is established to allow access to the processing resources and competence within the Sinano Institute members.

The platform is based on MOSFET device fabrication on 100 mm Si or SOI wafers although several process steps can be performed on small pieces and up to 200 mm wafer size. A major objective is to evaluate and integrate new materials/process modules in MOSFETs.

The processing competence among the partners is used to tune the MOSFET process flow for flexible integration of new materials/process modules to allow evaluation on fully processed devices. The turn-around-time for standard MOSFET fabrication is 3,5 month and gate lengths/fin widths down to a few tens of nm are available.

The Joint Processing Platform also assists partners to get access and know-how of specific processes not available at the home institution in the field of other advanced More Moore, More than Moore and Beyond-CMOS devices

If you want to send a Request Form, Please, CLICK HERE

Modelling Platform

Coordination: IUNET

Contact person: Enrico Sangiorgi, esangiorgi@unibo.it

The Joint Modelling Platform has been established to continue and further develop the positive experience of the SINANO NoE by integrating and validating the modelling approaches and tools developed by the individual partners against ad-hoc, well-characterized template devices.

The most promising and advances modelling tools-methods are brought together to tackle the main device physical challenges foreseen for the 22, 16 TN and beyond …(mobility enhancements, off currents, interface effects, low dimensional transport).

Methods and Tools for Device modelling

Semi-classical device modeling (Boltzmann equation):
Quantum Drift-Diffusion
Multi-Sub-Band Monte Carlo
Deterministic solutions of the Boltzmann Equation
Approaches for different carrier gas dimensionality, corresponding to planar bulk and MUG-MOS (2D) or nanowire FET (1D).
Full-quantum device modeling
Non Equilibrium Green Functions (NEGF)
Wigner-Boltzmann
Gate leakage modelling, including high-k materials and trapping
Modeling of intrinsic device parameters variability
Calculation of the sub-band structure for the 2D, 1D, electron and hole carrier gases and of the corresponding scattering rates
Effective mass approaches
k.p approaches

Methods and Tools for Compact modelling

Compact models for thin body multi-gate MOSFETs and for FinFETs including size induced quantization and quasi-ballistic transport
Compact models for MASTAR environment

Compact models to account for the main sources of intrinsic statistical variability

The Joint Modelling Platform also assists partners to get access and know-how of specific processes not available at the home institution.

If you want to send a Request Form, Please, CLICK HERE

Platforms

Platforms

Electrical characterization

Optical characterization

Physical and structural characterization

SiNANO Institute