Tyndall National Institute

Contact persons:

Giorgos Fagas, Paul Hurley

22 Thomas Street,
Dublin 8

Ireland

Tyndall National Institute, UCC – leading European research centre – expertise in nanotechnology, photonics, electronics.

Novel computing architectures (Neuromorphic, Quantum...)

Dielectric interfaces.
Expertise in material and device property extraction, (e.g. carrier mobility/concentration,
Contact resistance, defect density), hybrid metrologies, complemented by first-principles simulations.
Complete picture of material properties and device operation, and FlexiFab fabrication for FET device processing.
Atomic Layer Etching – modelling and etch experiments.
Dopant control
Logic and FETs
Ferroelectrics
Multiferroics
Fabrication and test of Ge-based and GeSn-based quantum electron devices.
Formation of low-resistance contacts using laser thermal annealing with alloys of nickel-germanide
Area Selective Materials Processing.
Si thin-films scaled below 10 nm in nanowire and silicon-on-insulator (SOI) devices

Alternative materials-2D layers

2D: TMDs – theory, materials growth and characterisation; electrical contacting of TMDs; device fabrication and characterisation.

Amorphous Oxide Semiconductor FETs

Novel computing architectures (Neuromorphic, Quantum...)

New interconnects and interconnect stacks – multi-scale simulation approach to predict interconnect morphology.
Wafer scale ALD growth of MoS2 monolayers; doping of TMDs for tuning of materials properties.
Experimental development of new ALE processes for multicomponent materials.
Laminate and bulk doping strategies to control defects and materials properties for device suitability.
Modelling and growth experiments for area selective deposition/ functionalization.
Nanomaterial design for GeSn nanowire devices
Modelling and experimental validationCharacterization of changes in Si surface quality by hybrid analysis, combining measurements from different
Characterization modalities, correlating topography, chemistry, and composition at the surface regions of interest.

Alternative materials-2D layers

Local modification of TMDs thin-films by pulsed laser annealing, fabrication & test of FETs and eDRAM electron devices.
Photoelectric response of ultra-thin MoS2 sandwiched between transparent conductive oxides
Reduction of contact resistance of TMDs
Modification of TMDs thin-films by pulsed laser annealing, for improved material structural properties & electron device performance

Amorphous Oxide Semiconductor FETs

Logic Nanodevices & circuits/FDSOI, Nanosheet, Stacked channels...

Memories/Charge-based, Resistive/Capacitive

Very low power devices

Memories/Charge-based, Resistive/Capacitive

Very low power devices

Micro-nano-bio Sensors & Systems

Others

Micro-nano-bio Sensors & Systems

Others

Minatec – CROMA
3 Parvis Louis Néel, CS 50257
38016 Grenoble Cedex 1, France