Rovira i Virgili University & Universidad de Granada

URV – UGR
Rovira i Virgili University & Universidad de Granada
Contact: Benjamin Iñiguez, Francisco Gamiz

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Equipment / Facilities

Processing platform

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Modelling platform

### Equipment ### Modelling platform

Characterization platform

### Equipment ### Characterization platform

Expertise
Main Expertises
Beyond CMOS Neuromorphic Computing
  • URV: Design and simulation of neuromorphic circuits using organic and oxide devices
  • UGR: Fabrication and characterization of neuromorphic circuits using alternative materials
Phonon engineering
  • UGR: Phonons in confined systems
Small slope switches-NW/TFET/NEMS
  • URV: Physically-based compact modeling of TFETs
  • UGR: Monte Carlo simulation of TFETs and NWs
Alternative materials-2D layers
  • URV: Adaptation of Si MOSFET models to TMD MOSFETs
  • UGR: Growth, characterization of 2D materials. Fabrication of electron devices based on 2D materials. Simulation of 2D materials and 2D materials devices (ab-initio, Monte Carlo and TCAD).
  • UGR: Monte Carlo simulation of III-V based devices (TFETs)
Novel devices for ultra-low power x
1D x
Quantum Technologies & Very low temperature electronics x
More Moore Logic Nanodevices& circuits
  • URV: Development of the first physically-based compact models for cylindrical nanowire MOSFETs and junctionless nanowires
  • UGR: Development of circuits based on reconfigurable FET devices
Memories
  • UGR: 1T-DRAM memories (devices and applications)
Very low power devices x
High temperature electronics x
More than Moore micro-nano-bio Sensors & Systems
  • UGR: Biosensors based on 2D materials for early diagnosis
  • UGR: Gas sensors based on 2D materials (electronic nose)
Energy Harvesting x
RF devices & circuits
  • URV: Development of some of then first modeling frameworks for Multi-Gate MOSFETs at high frequencies
Photonics devices
  • URV: Technology for highly efficient organic solar cells. Circuit-based modeling of these devices
  • UGR: Photonic applications of 2D materials
Power devices
  • URV: Co-author of the ASM HEMT compact model, standardized by the Compact Modeling Council as one of the two GAN mainstream models for microwave and poser applications
Flexible electronics
  • URV: Author of some of the mainstream models and direct parameter extraction methods for organic and oxide TFTs
  • UGR: Development of sensors based on flexible substrates
  • UGR: Flexible Electrophoretic displays based on graphene and graphene-related devices.
  • UGR: Flexible transparent electrodes
Smart systems& Systems design Smart systems x
Systems design x
Research interests
Research interests
Beyond CMOS Neuromorphic Computing
  • URV: Memristor compact modeling for neuromorphic circuit design>
Phonon engineering
  • UGR: Application of confined phonon models in Monte Carlo simulation of electron devices.
Small slope switches-NW/TFET/NEMS
  • URV: Extension of our TFET models to novel TFET structures
  • UGR: Monte Carlo simulation of TFETs and NWs
Alternative materials-2D layers
  • URV: Process and device modeling of TMD MOSFETs
  • UGR: Co-integration of 2D materials and CMOS technology
  • UGR: Development of 2D materials at wafer scales and compatible with CMOS BEOL.
Novel devices for ultra-low power x
1D
  • URV: Extension of our nanowire compact models to different quantum wire MOSFET structures
Quantum Technologies & Very low temperature electronics
  • URV: Physics and modeling of nanoscale devices at very low temperatures
  • UGR: Monte Carlo simulation of electron devices (Si and III-V) at very low temperature
More Moore Logic Nanodevices& circuits
  • URV: Extension of our nanowire compact models to different quantum wire MOSFET structures
  • UGR: Development of circuits based on reconfigurable FET devices
Memories
  • UGR: 1T-DRAM memories (devices and applications) using alternative materials.
  • UGR: Universal memory cells.
Very low power devices x
High temperature electronics x
More than Moore micro-nano-bio Sensors & Systems
  • UGR: Co-integration of Si CMOS and 2D sensors
Energy Harvesting x
RF devices & circuits
  • URV: Extension of our high frequency modeling framework to novel RF devices
Photonics devices
  • URV: Improvement od organic solar cell technologies. Extension of our organic solar cells models to other photovoltaic technologies
  • UGR: Photonic applications of 2D materials. Co-integration with Si CMOS
Power devices
  • URV: Extension of the ASM model to new GaN FET technologies, such as MIS-HEMT
Flexible electronics
  • URV: Extension to our TFT models and parameter extraction methods to Si-based TFTs on flexible substrates
Smart systems& Systems design Smart systems x
Systems design x