UVR-UGR

Rovira i Virgili University & Universidad de Granada

URV – UGR
Rovira i Virgili University & Universidad de Granada
Contact: Benjamin Iñiguez, Francisco Gamiz

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Equipment / Facilities

Processing platform

### Equipment ### Processing platform

Modelling platform

### Equipment ### Modelling platform

Characterization platform

### Equipment ### Characterization platform

Expertise

		Main Expertises
Beyond CMOS	Neuromorphic Computing	URV: Design and simulation of neuromorphic circuits using organic and oxide devices UGR: Fabrication and characterization of neuromorphic circuits using alternative materials
	Phonon engineering	UGR: Phonons in confined systems
	Small slope switches-NW/TFET/NEMS	URV: Physically-based compact modeling of TFETs UGR: Monte Carlo simulation of TFETs and NWs
	Alternative materials-2D layers	URV: Adaptation of Si MOSFET models to TMD MOSFETs UGR: Growth, characterization of 2D materials. Fabrication of electron devices based on 2D materials. Simulation of 2D materials and 2D materials devices (ab-initio, Monte Carlo and TCAD). UGR: Monte Carlo simulation of III-V based devices (TFETs)
	Novel devices for ultra-low power	x
	1D	x
	Quantum Technologies & Very low temperature electronics	x
More Moore	Logic Nanodevices& circuits	URV: Development of the first physically-based compact models for cylindrical nanowire MOSFETs and junctionless nanowires UGR: Development of circuits based on reconfigurable FET devices
	Memories	UGR: 1T-DRAM memories (devices and applications)
	Very low power devices	x
	High temperature electronics	x
More than Moore	micro-nano-bio Sensors & Systems	UGR: Biosensors based on 2D materials for early diagnosis UGR: Gas sensors based on 2D materials (electronic nose)
	Energy Harvesting	x
	RF devices & circuits	URV: Development of some of then first modeling frameworks for Multi-Gate MOSFETs at high frequencies
	Photonics devices	URV: Technology for highly efficient organic solar cells. Circuit-based modeling of these devices UGR: Photonic applications of 2D materials
	Power devices	URV: Co-author of the ASM HEMT compact model, standardized by the Compact Modeling Council as one of the two GAN mainstream models for microwave and poser applications
	Flexible electronics	URV: Author of some of the mainstream models and direct parameter extraction methods for organic and oxide TFTs UGR: Development of sensors based on flexible substrates UGR: Flexible Electrophoretic displays based on graphene and graphene-related devices. UGR: Flexible transparent electrodes
Smart systems& Systems design	Smart systems	x
Smart systems& Systems design	Systems design	x

Research interests

		Research interests
Beyond CMOS	Neuromorphic Computing	URV: Memristor compact modeling for neuromorphic circuit design>
	Phonon engineering	UGR: Application of confined phonon models in Monte Carlo simulation of electron devices.
	Small slope switches-NW/TFET/NEMS	URV: Extension of our TFET models to novel TFET structures UGR: Monte Carlo simulation of TFETs and NWs
	Alternative materials-2D layers	URV: Process and device modeling of TMD MOSFETs UGR: Co-integration of 2D materials and CMOS technology UGR: Development of 2D materials at wafer scales and compatible with CMOS BEOL.
	Novel devices for ultra-low power	x
	1D	URV: Extension of our nanowire compact models to different quantum wire MOSFET structures
	Quantum Technologies & Very low temperature electronics	URV: Physics and modeling of nanoscale devices at very low temperatures UGR: Monte Carlo simulation of electron devices (Si and III-V) at very low temperature
More Moore	Logic Nanodevices& circuits	URV: Extension of our nanowire compact models to different quantum wire MOSFET structures UGR: Development of circuits based on reconfigurable FET devices
	Memories	UGR: 1T-DRAM memories (devices and applications) using alternative materials. UGR: Universal memory cells.
	Very low power devices	x
	High temperature electronics	x
More than Moore	micro-nano-bio Sensors & Systems	UGR: Co-integration of Si CMOS and 2D sensors
	Energy Harvesting	x
	RF devices & circuits	URV: Extension of our high frequency modeling framework to novel RF devices
	Photonics devices	URV: Improvement od organic solar cell technologies. Extension of our organic solar cells models to other photovoltaic technologies UGR: Photonic applications of 2D materials. Co-integration with Si CMOS
	Power devices	URV: Extension of the ASM model to new GaN FET technologies, such as MIS-HEMT
	Flexible electronics	URV: Extension to our TFT models and parameter extraction methods to Si-based TFTs on flexible substrates
Smart systems& Systems design	Smart systems	x
Smart systems& Systems design	Systems design	x

Rovira i Virgili University & Universidad de Granada

SiNANO Institute