III-V-MOS Project
The III-V-MOS project completed successfully on April 30th, 2017 but its activities will not stop here. Keep following us at major international conferences, via LinkedIn and via partner institution websites.
Newsletters:
Presentations:
- III-V-MOS Project Presentation and Overview
- III-V-MOS Project Press release
- Poster
- Joint Open Access Presentation: “A comprehensive study of band structure calculation methods for bulk and ultra thin InxGa1-xAs films and comparison with experimental ellipsometry bandgap data has been recently published by the consortium partners on Solid State Electronics” DOI: 10.1016/j.sse.2015.09.005
Public Part of the Final Report
Public Deliverables
- III-V-MOS Deliverable D1.1: Press Release
- III-V-MOS Deliverable D1.2: III-V-MOS Project website
- III-V-MOS Deliverable D1.3: 1st Annual review of dissemination activities
- III-V-MOS Deliverable D1.4 – Updated: Proceedings of the first III-V-MOS International Workshop
- III-V-MOS Deliverable D1.5: 2nd Annual review of dissemination activities
- III-V-MOS Deliverable D1.6: Proceedings of the second III-V-MOS International Workshop
- III-V-MOS Deliverable D1.8: 3rd Annual review of dissemination activities
- III-V-MOS Deliverable D2 1_revised_final: Detailed first principles data for the electronic structure of relevant systems which can be used for the coarse grained simulations
- III-V-MOS Deliverable D2.2: MSMC simulator for III-V channel materials and feedback to WP3 on mobility characterizations
- III-V-MOS Deliverable D2.3 final: Performance analysis of strained III-V channels based on different quantum transport codes
- III-V-MOS Deliverable D2.4: Physics-based simulations of leakage currents and contact resistance
- III-V-MOS Deliverable D2.5 final: Final report on Monte Carlo simulation of III-V MOSFETs
- III-V-MOS Deliverable D2.6: Comparison of different transport models on a small sub-set of template devices suitable for DFT transport calculations
- III-V-MOS Deliverable D3.6 final: Intrinsic material and transport properties in strained In(x)Ga(1-x)As (0 ≤ x ≤ 1) nanowires as a function of diameter, doping and temperature
- III-V-MOS Deliverable D3.7 modified: Electron drift velocity and diffusion coefficient dependence on electric field at low driving fields in bulk and on-insulator InGaAs
- III-V-MOS Deliverable D4 4: Report on mobility models for TCAD
- III-V-MOS Deliverable D4.6 updated: Report on comparison with WP3 measurements of velocity-field relation, effective mobility and N+/N/N+ characteristics
- III-V-MOS Deliverable D6.2: TCAD Application Methodology
Social Media
Website:
Some pictures and information coming from the former III-V-MOS website
LinkedIn:
Join our III-V-MOS LinkedIn Group here
Minatec – CROMA