KTH Royal Institute of Technology
Contact persons:
Mikael Östling, Per-Erik Hellström
KTH Royal Institute of Technology
SE-100 44,
Stockholm,
Sweden
Processing platform
1300 m2 clean room handling up to 200 mm wafer size
FD-SOI CMOS technology platform on 100 mm wafers
SiC bipolar/MOSFET technology platform on 100 mm wafers
MEMS processing platform
http://www.myfab.se/
Major Equipment:
AMAT P5000: RIE SiO2, SiN
AMAT P5000: RIE Si, SiGe, SiC
AMAT P5000: RIE AL, TiN, TiW
AMAT P5000: PECVD SIO2, SiN
AMAT Endura: PVD Ni, TiW, Al
AMAT Centura: Deep Silicon Etch
MATTSON RTP: Annealing, Oxidation
ASM Epsilon2000: CVD Si, SiGe, Ge, GeSn
Nikon NSR TFHi12: I-line (365 nm) stepper lithography
BENEQ TFS200: ALD SiO2, TiN, AL2O3, HfO2, Tm2O3
IPEC/Axus Avanti 472: CMP SiO2, SiC
Thermco: Furnaces Anneals N2, O2, N20
Aixtron 200/4: MOVPE GaAs,InP, InAs, GaSb
Modelling platform
Process Design Kit (Cadence environment) for KTH’s FD SOI CMOS Technology.
Synopsys Sentaurus TCAD Simulation
Characterization platform
Semi-automatic probe station for on wafer electrical characterization (Keithley 4200)
High Temperature (up to 500 °C) on wafer electrical characterization
Physical Characterization: HRXRD, HRSEM, TEM, Spectroscopic Ellipsometry, AFM