Warsaw University of Technology / Cezamat

Contact persons:

Romuald Beck

Warsaw University of Technology
Pl. Politechniki 1,

00-661 Warsaw,

Poland

Equipment / Facilities

Processing platform

  • CR facility with cleanliness level 1000/100
  • Thermal processes: oxidation (dry and wet SiO2), diffusion (B, P), annealing (PMA)/ high temperature recrystallization
  • PECVD Oxford Instruments (fabrication of SiOx, SiNx, SiOxNy, a-Si)
  • RIE Oxford Instruments (etching od dielectric/conductive materials in fluorine, as well as chlorine-based RF plasma)
  • Reactive magnetron sputtering (Oxford Instruments); fabrication of dielectric materials (HfOx, HfOxNy, AlN, AlOx, TiOx), conductive (Al, Ti, TiN) and amorphous semiconductor (IGZO)
  • PVD – e-gun 6kW (Mo, Pt, W, Ti, Ni,…)
  • Photolithography SUSS MJB4 (UV, 1 µm feature size)
  • Batch spray chemical cleaning/etching SICONNEX (Piranha, SC1, SC2, HF, BHF, metals etching, dielectrics etching, …)
  • Thermal processes: dry and wet (HYDROX) oxidation, diffusion (B), high temperature annealing
  • LPCVD Si3N4 and poly-Si deposition
  • RIE/ICP plasma etching in chlorine containing plasmas Oxford Instruments (RF and ICP  plasma source; -30°C to 80°C temperature control; in-situ interferometric etching monitoring)
  • Photolithography EVG 6200 (UV, 0,8 µm feature size, front side and back side alignment)
  • Wafer bonding EVG 510/200 (adhesive, eutectic, glass frit, direct bonding)
  • Ion implantation FLEXion 200-IBS ( 5keV-200keV, 1 AMU-210 AMU, 0°-60° tilt angle; substrate temperature control 100°C-500°C)
  • E-beam writer JEOL 9300 (50kV and 100kV, CD<20nm, writing field w/stitching 1mm x 1mm)

Modelling platform

Characterization platform

  • Advanced electrical characterization….
    • Modern SUSS MicroTec PM8 probe station for the measurement of very low currents in a wide range of temperatures
    • Keithley 4200-SCS Semiconductor Characterization System comprising:
      • SMUs for the measurement of static and quasi-static I-V charracteristics,
      • Low-noise preamplifers ensuring the accuracy of current measurement below 1 pA.
      • Small-signal module for admittance measurements in the 1kHz-10MHz range,
      • Ultrafast pulse modules for charge-pumping and charge-trapping characterization.
    • LCR HP 4285A precision meter for admittance measurements in the 75kHz – 30MHz range
    • A set of Keithley SMUs 236, 237 and 238 for static I-V measurements in a wide range of currents (up to 1 A) and voltages (up to 1000 V)
    • Keysight B1500 Device Analyzer for static (I-V) and small-signal (C-G-U) measurements
  • Spectroscopic ellipsometry UVISEL (190 – 850 nm, automatic goniometry)
  • ·Spectroscopic ellipsometry UVISEL2 (190-2000 nm, 2D mapping, automatic goniometry, stage movements 200mm x 200mm)
  • AFM
  • HRSEM ZEISS Auriga (SE and BSE observations, 0,01kV – 30kV; resolutions: 2,0 nm @ 1kV, 1,0 nm @ >15kV; stage movements 0-110mm x 0-110mm; tilt angle: -5° to +60°, rotation: 360°)
  • HRTEM
  • FTIR
  • Confocal microscopy
  • Profilometry
Expertise
Main Expertises
Beyond CMOS Neuromorphic Computing x
Phonon engineering • Fabrication of phononic crystals using ultra high resolution e-beam lithography and anisotropic and highly selective silicon etching
Small slope switches-NW/TFET/NEMS • Reliability and variability of TFET devices and structures (i.e., CV/IV characterization, Split-CV, and Charge Pumping), extraction of electrical properties of fabricated materials and structures, transport mechanisms identification
• Design and modeling of transport in TFET
Alternative materials-2D layers • Integration of 2D materials (molybdenum sulfide – MoS2, and graphene) and nanocrystals (Si, SiC) for modern optoelectronic and photonic structures
• Graphene transfer onto Si substrate
Novel devices for ultra-low power x
1D x
Quantum Technologies & Very low temperature electronics x
More Moore Logic Nanodevices& circuits
  • Materials synthesis and growth (PECVD, PVD, thermal methods)
  • MOS test devices processing
  • Reliability and variability of MOS/MIS devices and circuits (i.e., CV/IV characterization, Split-CV, and Charge Pumping), extraction of electrical properties of fabricated materials and structures, conduction mechanisms verification
  • Ultra-shallow RF plasma implantation of nitrogen/fluorine for improvement of electro-physical properties of MOS structures or modification of growth kinetics of particular dielectric layers
  • Semiconductor nanocrystals (Si, SiC, ZnO) embedded in dielectric ensembles – technology and characterization
  • Optimization and design of electrical properties of fabricated materials using Design-of-Experiments (DoE) method
Memories
  • Materials synthesis and growth (PECVD, PVD, thermal methods)
  • MOS test devices processing
  • Reliability and variability of MOS/MIS devices and circuits (i.e., CV/IV characterization, Split-CV, and Charge Pumping), extraction of electrical properties of fabricated materials and structures, conduction mechanisms verification
  • Ultra-shallow RF plasma implantation of nitrogen/fluorine for improvement of electro-physical properties of MOS structures or modification of growth kinetics of particular dielectric layers
  • Semiconductor nanocrystals (Si, SiC, ZnO) embedded in dielectric ensembles – technology and characterization
  • Optimization and design of electrical properties of fabricated materials using Design-of-Experiments (DoE) method
Very low power devices x
High temperature electronics x
More than Moore micro-nano-bio Sensors & Systems
  • Graphene transfer and etching;
  • Low negative impact of fabrication on graphene parameters;
Energy Harvesting
  • Energy harvesters performance characterization
  • Fabrication of suspended thin-film Si membranes
RF devices & circuits x
Photonics devices
  • Dielectric, conductive, and semiconductor materials synthesis for optoelectronic and photonic devices technology
  • Full line-up for optical characterization of fabricated materials and structures, i.e., optical spectroscopy, high-resolution laser spectroscopy, spectroscopic ellipsometry, refractometry, confocal microscopy, high-resolution spectrophotometer with a helium cryostat for absorption, and advanced spectrofluorometric system for emission/excitation/fluorescence kinetics measurements, Optical Backscattering Reflectometry (OBR)
  • Optimization and design of optical properties of fabricated materials using Design-of-Experiments (DoE) method, as well as commercially available software to obtain tailored properties (transparency, reflection, etc.) of obtained layers and periodic stacks that can be used in novel nanophotonic structures which possess tailorable and dynamically controllable spectral and angular optical properties
  • Design, modeling, and fabrication of nanophotonic multi-layer and metamaterial structures in thin- and ultra-thin regime (especially planar tunable hyperbolic metamaterials) based on novel semiconductor, dielectric, and conductive materials
  • Advanced design and modeling of semiconductor and photonic structures using in-house software development and commercially available capabilities (COMSOL, Macleod) based on well-established models of electromagnetic fields interact with matter
  • Design and simulation of photonic integrated circuits (PICs)
  • Fabrication of photonic elements and PIC based on Si, Ge, SiN
  • Optical and electrical characterization of photonic elements and circuits
  • Design and fabrication of diffractive optical elements, microlenses, holograms for visible and EUV wavelengths
Power devices
  • Detailed electrical characterization, extraction of electrophysical parameters  (static and pulse I-V, C-V, stress and sense, breakdown)
Flexible electronics
  • TFT devices processing and electrical characterization
  • Reliability and variability of TFT devices and structures (i.e., CV/IV characterization, Split-CV, and Charge Pumping), extraction of electrical properties of fabricated materials and structures, transport mechanisms identification
Smart systems& Systems design Smart systems
  • Design and assembly of dedicated measurement tools, power supplies, and embedded systems with the integrated optoelectronic and photonic devices; SMD assembly and reliability tests
Systems design x
Research interests
Research interests
Beyond CMOS Neuromorphic Computing x
Phonon engineering
  • Si thermal conductivity reduction in Silicon
Small slope switches-NW/TFET/NEMS
  • Steep-slope devices and tunnel FETs
  • Semi-classical and quantum mechanical modeling of TFETs – study the effect of device geometry and material on I-V characteristics
  • Study the effect of trap-assisted tunneling current on the device’s performance
Alternative materials-2D layers
  • Nanoelectronic and photonic structures, i.e., photodetectors, FET devices, sensors
  • CNT MOSFETs
  • Graphene based MOSFETs
  • Sub 50nm FETs
Novel devices for ultra-low power x
1D x
Quantum Technologies & Very low temperature electronics x
More Moore Logic Nanodevices& circuits
  • High-k dielectric materials for MIS devices
  • Multi-level gate-sacks for memory structures
  • Dielectric materials for novel memory (NVSM, RRAM) structures
  • Modeling of current in MIS devices
  • Transport mechanism in RRAM structures
Memories
  • High-k dielectric materials for MIS devices
  • Multi-level gate-sacks for memory structures
  • Dielectric materials for novel memory (NVSM, RRAM) structures
  • Modeling of current in MIS devices
  • Transport mechanism in RRAM structures
Very low power devices x
High temperature electronics x
More than Moore micro-nano-bio Sensors & Systems
  • Graphene based gas detectors
  • Thin-film Silicon thermoelectric microbolometers
Energy Harvesting
  • Thin-film Silicon CMOS compatible thermoelectric generators
  • Power boosters for from-the-shelf thermoelectric generators
  • Novel harvesting techniques from ubiquitous energy sources
  • Nanoscale material engineering aimed at heat management
RF devices & circuits x
Photonics devices
  • Silicon photonics
  • Novel photonic devices based on metamaterials
  • Hybrid optoelectronics and photonics
  • Si and Ge photonic integrated circuit at MIR frequency range
  • SiN photonic integrated circuits for sensing applications
Power devices
  • Simulation of electrical characteristics
  • Influence of electrical stress, stability, breakdown mechanisms
Flexible electronics
  • Transparent and flexible electronics based on novel transparent amorphous semiconductor and dielectric layers (TFTs)
Smart systems& Systems design Smart systems
  • Smart sensors, IoT
Systems design x