University Politehnica of Bucharest

Contact persons:

Marius Enachescu

Iiulian Boerasu

Splaiul Independenței 313,
060042 București,
Roumanie

Novel computing architectures (Neuromorphic, Quantum...)

FIB-SEM & correlative STEM-EDX/EELS analysis (STEM 0.14 nm; SEM 0.5 nm) for buried interface and nanoscale defect characterization
Co-localized XPS-ISS-µRaman-REELS analysis (XPS ~5-10 nm depth; Raman ~1-2 µm lateral resolution) for chemical and electronic structure characterization

Alternative materials-2D layers

Second Harmonic Generation (SHG) imaging for strain- and symmetry-related variation mapping
MX-µRaman for stress/strain, structural, and compositional characterization of 2D materials and heterostructures
AFM-based surface roughness metrology (RMS/Ra) and Power Spectral Density (PSD) analysis for 2D materials

1D Devices/NW/CNT

MX-µRaman for structural characterization of 1D semiconductor nanostructures and devices
Electrical AFM (C-AFM, SSRM, SCM, KPFM, EFM) for characterization of electrically active structures and devices
AFM/AFM-IR for defect and contaminant detection, localization and evaluation in 1D nanostructures

Very low temperature electronics

Amorphous Oxide Semiconductor FETs

FIB-SEM & correlative STEM-EDX/EELS analysis (STEM 0.14 nm; SEM 0.5 nm) for buried interface, oxide integrity and nanoscale defect characterization
AFM-IR for chemical characterization of amorphous oxide semiconductor FETs

Logic Nanodevices & circuits/FDSOI, Nanosheet, Stacked channels...

FIB-SEM & correlative STEM-EDX/EELS analysis (STEM 0.14 nm; SEM 0.5 nm) for buried interface and nanoscale defect characterization
Co-localized XPS-ISS-µRaman-REELS analysis (XPS ~5-10 nm depth; Raman ~1-2 µm lateral resolution) for chemical and electronic structure characterization
AFM-based surface roughness metrology (RMS/Ra) and Power Spectral Density (PSD) analysis
AFM-based failure analysis (C-AFM, SSRM, SCM, KPFM, EFM, nanomechanics, AFM-IR)
MX-µRaman for stress/strain detection and quantification

Memories/Charge-based, Resistive/Capacitive

Electrical AFM (C-AFM, KPFM/EFM, SSRM, SCM) for nanoscale electrical and electrostatic characterization of charge-based, resistive and capacitive memory devices

Very low power devices

Electrical AFM (C-AFM, KPFM/EFM, SSRM, SCM) for nanoscale leakage, charge trapping and electrostatic characterization of ultra-low-power devices

High temperature electronics

MX-µRaman for lattice expansion and anharmonicity, phonon-phonon scattering mechanisms, and hotspots detection at the micrometer scale (1-2µm)

Micro-nano-bio Sensors & Systems

Sensor testing allowing to control thermo-hygrometric states (T, RH), gas flow dynamics (concentration, flow rate, pumping), and chrono-amperometric configurations

Photonics devices

FIB-SEM & correlative STEM-EDX/EELS analysis (STEM 0.14 nm; SEM 0.5 nm) for buried interface analysis, nanoscale interdiffusion, oxide formation and defect characterization
AFM-IR for topography-correlated nanoscale chemical characterization (res. <10 nm), including defect and contaminant detection in heterogeneous photonic structures
Co-localized XPS-ISS-µRaman-REELS analysis (XPS ~5-10 nm depth; Raman ~1-2 µm lateral resolution) for chemical and electronic structure characterization
MX-µRaman/HRXRD for stress/strain detection and quantification

Power devices

Modular power test platform for advanced electrical characterization of power devices (off-state leakage up to 3kV; pA sensitivity; DC I-V up to 1A; pulsed I-V up to 10/800A with pulse widths down to 1 μs; integrated C-V)
X-ray computed µ-tomography (µCT; 130 kV microfocus, voxel resolution down to ~2 µm) for non-destructive 3D inspection of packaging defects and internal structural features
Environmental endurance and reliability testing (temperature/humidity), correlated with before and after e-beam inspection (SEM-EDX) for degradation mechanism analysis

Advanced characterization of photonic, power and sensing semiconductor technologies
Materials and interface analysis for heterogeneous functional devices
Reliability and failure analysis of semiconductor devices

Heterogeneous Integration, & Advanced Packaging

X-ray computed µ-tomography (µCT; voxel resolution down to ~2 µm) for non-destructive 3D inspection of advanced packaging structures, including RDLs, Cu pillars/micro-bumps, TSV interconnects, and hybrid bonding interfaces (oxide-oxide, Cu-Cu)
FIB cross-sectioning and HR SEM imaging (SEM res. – 0.7 nm) for localized failure analysis, microstructural characterization, and dimensional metrology of metallization stacks, interconnects, and 2.5D/3D integrated assemblies
AFM-based nanomechanical assessment of dielectric and redistribution layers for material uniformity, local mechanical property evaluation, and process-induced modification analysis
Environmental endurance and reliability testing (temperature/humidity), correlated with before and after e-beam inspection (SEM-EDX) for degradation mechanism analysis

Heterogeneous Integration, & Advanced Packaging

Minatec – CROMA
3 Parvis Louis Néel, CS 50257
38016 Grenoble Cedex 1, France