Competences
Novel computing architectures (Neuromorphic, Quantum, etc.)
- IUNET-Modena: – Design of neuromorphic circuits with RRAM devices
- cryo CMOS device operation and noise
- TAU: Neuromorphic Devices (Synapses and neurons), Neuromorphic circuits for edge learning, Non-volatile Memories, Cryogenic Electronics
- THM: – Modeling of memristor-based ANN with inherent stochastic learning
- Modeling and simulation of various synaptic devices
- Simulation, modeling and design of ANN
- Organic synaptic devices
- TYNDALL: – Dielectric interfaces.
- Expertise in material and device property extraction, (e.g. carrier mobility/concentration, Contact resistance, defect density), hybrid metrologies, complemented by first-principles simulations.
- Complete picture of material properties and device operation, and FlexiFab fabrication for FET device processing.
- Atomic Layer Etching – modelling and etch experiments.
- Dopant control
- Logic and FETs
- Ferroelectrics , Multiferroics
- Fabrication and test of Ge-based and GeSn-based quantum electron devices.
- Formation of low-resistance contacts using laser thermal annealing with alloys of nickel-germanide
- Area Selective Materials Processing.
- Si thin-films scaled below 10 nm in nanowire and silicon-on-insulator (SOI) devices
- UAB: – Resistive switching devices (memristors): characterization and modeling.
- SPICE modeling of memristive nanowire networks
- Uppsala: Memristor devices for Neuromorphic computing
Phonon engineering
- IUNET-Modena: Electrothermal modeling and simulation of advanced devices
- UAB: Computation of thermal properties of novel materials and nanostructures with DFT and Molecular Dynamics.
Small slope switches-TFET/Fe Transistors/Dirac-Source FET/NEMS/etc.
- IUNET- Modena: – SS Switches, TFETs, Dirac Sources
- Ferroelectric device simulation
- TAU: TFET/2D-FETs/FeFETs
- THM: Simulation and modeling of TFET, JL-FET, SB-FET, NW, RFET
Alternative materials-2D layers
- KTH: Inkjet printing and casting of formulated 2D ink materials
- TAU: 2D semiconductors
- TYNDALL: 2D: TMDs – theory, materials growth and characterisation; electrical contacting of TMDs; device fabrication and characterisation.
- UAB: – Electrical characterization of 2D nanodevices.
- Development of specialized characterization set-ups.
- Structural, electronic and thermal properties of vdW materials from first principles.
1D Devices/NW/CNT
- Uppsala: SiNW based electronics sensors
Very low temperature electronics
- ENSICAEN: DC and low-frequency noise characterisation and modelling (UTBOX, FinFET, GAA NS FET, GAA NW FET …)
- IUNET-Modena: cryo CMOS device operation and noise
- TAU: Cryogenic memories (Design, fabrication and characterization of cryogenic memory devices down to 4K and integrate them in in-memory-computing circuits.)
- Uppsala: Suspended nanoscale single-electron transistor as gigahertz nanoelectromechanical beam resonator
Amorphous Oxide Semiconductor FETs
- IUNET-Modena: IGZO device modeling and simulation
- TAU: IGZO-FeFETs (Design, fabrication and characterization of scaled memory devices for high integration density and ultralow power operation.)
- TYNDALL: P-type Semiconducting oxide design and characterisation
Competences
Logic Nanodevices & circuits/FDSOI, Nanosheet, Stacked channels, etc
- ENSICAEN: DC and low-frequency noise characterisation and modelling (UTBOX, FinFET, GAA NS FET, GAA NW FET …)
- IUNET- Modena: Electrothermal modeling and simulation of advanced devices
- KTH: FDSOI Process Line with various options for testing new functional sensors etc
- THM : – Simulation and modeling of multiple-gate FET, NW-FET
- Fast multiscale simulation approach for quantum transport in ultrashort MOSFETs
- TYNDALL: – Dielectric interfaces.
- Interconnect metal prediction
- UAB: – Reliability of CMOS devices and integrated circuits.
- Electrical characterization and Modeling of 2D semiconductor based FETs for digital and RF applications.
- Development of specialized characterization set-ups and smart analysis techniques
- Modelling of quantum transport and simulation of nanometer scale devices using a multi-scale approach from ab-initio methods (SIESTA, BITLLES) to compact modelling.
- Modelling and simulation of ultra-small SOI-based MOSFETs in the scaling limit.
Memories/Charge-based, Resistive/Capacitive
- IUNET-Modena: RRAM modeling and simulation up to compact circuit level
- TAU: Memories (FeFET, FeCap, FTJ), resistive/capacitive
- THM: Statistical modeling resistive RAM devices
- TYNDALL: Memories, Memristor / Resistive RAM
- UAB: Resistive switching devices (ReRAM): characterization and modeling
- Uppsala: Memristor devices for Neuromorphic computing
Very low power devices
- KTH: Low power design for MEDTECH applications
- TYNDALL: Topological Materials
High temperature electronics
- KTH: – High temperature FDSOI process line.
- SiC circuits for temperatures beyond 400 C.
- Uppsala: Interconnects for high temperature electronics
Others
Competences
Micro-nano-bio Sensors & Systems
- IUNET-Modena: High-frequency Impedance and capacitance spectroscopy with nanoelectrode array sensors. Micro-Nanoplastics characterization for health and environment. Purely electrical nanoscale bioanalyte detection and imaging (phages, RBC, etc.)
- KTH: Complete Micro-Systems fabrication facilities
- THM: – MEMS
- Pressure, Infrared, Temperature Sensors
- MEMS process and device modelling
- TYNDALL: Prediction of sensor materials
- Uppsala: Nanoelectronics for biotechnology
Energy Harvesting
- KTH: Graphen and other 2D materials for energy harvesting
RF devices & circuits
- UAB: – Modelling and simulation of graphene and post-graphene 2D materials devices targeting RF and sensing applications
- RF characterization and modelling of memristors
Photonics devices
- KTH:
- Vertical Cavity Lasers in III-V materials with integration of photonic crystals
- Transfer Printing
- Hybrid InP/PCSELs
- CMOS Photonics
Power devices
- IUNET-Modena: – Electrothermal and hot carrier effects simulation of GaN devices and circuits
- TCAD simulation and characterization of trapping effects in GaN and SiC
- KTH: – SiC power devices including MOSFETs, BJT and IGBTs for high voltage
- Partner in the WBG Pilot Line for HV BJT/IGBT
Flexible electronics
- IUNET-Modena: IGZO and dissolvable compostable materials for electronics
- TAU: 2D semiconductor-based wearable in-sensor computing
- THM: – Simulation and modeling of submicron organic TFT devices
- Non-quasistatic modeling of organic TFTs
- Modeling variability of organic TFTs
- Simulation of organic permeable-base transistors
- Simulation and modeling of organic electrochemical FET
- UAB: Electrical characterization and modeling of inkjet-printed devices, Organic TFTs.
- Uppsala: Full-inorganic flexible Ag2S based memristors. Electronic skin.
Others
- KTH: Laser ablation for several emerging materials such as ferroelectrics, and quantum based materials.
- TYNDALL: Ferroelectrics, Piezoelectrics, Multiferroics
Competences
Smart systems
- TAU: Associative learning systems using sensor fusion and memristive technology
Systems design
- UAB: Device compact modeling for Reliability-Aware Design of ICs.
Heterogeneous Integration, & Advanced Packaging
- IUNET- Modena: Electrothermal modeling and simulation at board level
